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Datasheets for 2A-T

Datasheets found :: 245
Page: | 1 | 2 | 3 | 4 | 5 | 6 |
No. Part Name Description Manufacturer
31 FM28V202A-TGTR 2-Mbit (128 K � 16) F-RAM Memory Cypress
32 K4S280432A-TC/L10 128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL Samsung Electronic
33 K4S280432A-TC/L1H 128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL Samsung Electronic
34 K4S280432A-TC/L1L 128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL Samsung Electronic
35 K4S280432A-TC/L75 128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL Samsung Electronic
36 K4S280432A-TC/L80 128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL Samsung Electronic
37 K4S280832A-TC/L10 128Mbit SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL Samsung Electronic
38 K4S280832A-TC/L1H 128Mbit SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL Samsung Electronic
39 K4S280832A-TC/L1L 128Mbit SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL Samsung Electronic
40 K4S280832A-TC/L75 128Mbit SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL Samsung Electronic
41 K4S280832A-TC/L80 128Mbit SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL Samsung Electronic
42 K4S560432A-TC/L1H 256Mbit SDRAM 16M x 4bit x 4 Banks Synchronous DRAM LVTTL Samsung Electronic
43 K4S560432A-TC/L1L 256Mbit SDRAM 16M x 4bit x 4 Banks Synchronous DRAM LVTTL Samsung Electronic
44 K4S560432A-TC/L75 256Mbit SDRAM 16M x 4bit x 4 Banks Synchronous DRAM LVTTL Samsung Electronic
45 K4S560432A-TC/L80 256Mbit SDRAM 16M x 4bit x 4 Banks Synchronous DRAM LVTTL Samsung Electronic
46 K4S560832A-TC/L1H 256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL Samsung Electronic
47 K4S560832A-TC/L1L 256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL Samsung Electronic
48 K4S560832A-TC/L75 256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL Samsung Electronic
49 K4S560832A-TC/L80 256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL Samsung Electronic
50 K4S561632A-TC/L1H 256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL Samsung Electronic
51 K4S561632A-TC/L1L 256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL Samsung Electronic
52 K4S561632A-TC/L75 256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL Samsung Electronic
53 K4S561632A-TC/L80 256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL Samsung Electronic
54 K6L0908C2A-TB55 64Kx8 bit Low Power CMOS Static RAM Samsung Electronic
55 K6L0908C2A-TB70 64Kx8 bit Low Power CMOS Static RAM Samsung Electronic
56 MAX6319LHUK32A-T Microprocessor supervisory circuit with manual reset (manual reset input, reset outputs active-low,push/pull and active-high, push/pull).Factory-trimmed reset threshold(typ) 3.200V, reset timeout(min) 1ms MAXIM - Dallas Semiconductor
57 MAX6319LHUK42A-T Microprocessor supervisory circuit with manual reset (manual reset input, reset outputs active-low,push/pull and active-high, push/pull).Factory-trimmed reset threshold(typ) 4.200V, reset timeout(min) 1ms MAXIM - Dallas Semiconductor
58 MAX6319MHUK32A-T Microprocessor supervisory circuit with manual reset (manual reset input, reset outputs active-high, push/pull and active-low, bidirectional).Factory-trimmed reset threshold(typ) 3.200V, reset timeout(min) 1ms MAXIM - Dallas Semiconductor
59 MAX6319MHUK42A-T Microprocessor supervisory circuit with manual reset (manual reset input, reset outputs active-high, push/pull and active-low, bidirectional).Factory-trimmed reset threshold(typ) 4.200V, reset timeout(min) 1ms MAXIM - Dallas Semiconductor
60 MAX6322HPUK32A-T Microprocessor supervisory circuit with manual reset (manual reset input, reset outputs active-high, push/pull and active-low, open-drain).Factory-trimmed reset threshold(typ) 3.200V, reset timeout(min) 1ms MAXIM - Dallas Semiconductor


Datasheets found :: 245
Page: | 1 | 2 | 3 | 4 | 5 | 6 |



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