No. |
Part Name |
Description |
Manufacturer |
31 |
FM28V202A-TGTR |
2-Mbit (128 K � 16) F-RAM Memory |
Cypress |
32 |
K4S280432A-TC/L10 |
128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL |
Samsung Electronic |
33 |
K4S280432A-TC/L1H |
128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL |
Samsung Electronic |
34 |
K4S280432A-TC/L1L |
128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL |
Samsung Electronic |
35 |
K4S280432A-TC/L75 |
128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL |
Samsung Electronic |
36 |
K4S280432A-TC/L80 |
128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL |
Samsung Electronic |
37 |
K4S280832A-TC/L10 |
128Mbit SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL |
Samsung Electronic |
38 |
K4S280832A-TC/L1H |
128Mbit SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL |
Samsung Electronic |
39 |
K4S280832A-TC/L1L |
128Mbit SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL |
Samsung Electronic |
40 |
K4S280832A-TC/L75 |
128Mbit SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL |
Samsung Electronic |
41 |
K4S280832A-TC/L80 |
128Mbit SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL |
Samsung Electronic |
42 |
K4S560432A-TC/L1H |
256Mbit SDRAM 16M x 4bit x 4 Banks Synchronous DRAM LVTTL |
Samsung Electronic |
43 |
K4S560432A-TC/L1L |
256Mbit SDRAM 16M x 4bit x 4 Banks Synchronous DRAM LVTTL |
Samsung Electronic |
44 |
K4S560432A-TC/L75 |
256Mbit SDRAM 16M x 4bit x 4 Banks Synchronous DRAM LVTTL |
Samsung Electronic |
45 |
K4S560432A-TC/L80 |
256Mbit SDRAM 16M x 4bit x 4 Banks Synchronous DRAM LVTTL |
Samsung Electronic |
46 |
K4S560832A-TC/L1H |
256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL |
Samsung Electronic |
47 |
K4S560832A-TC/L1L |
256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL |
Samsung Electronic |
48 |
K4S560832A-TC/L75 |
256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL |
Samsung Electronic |
49 |
K4S560832A-TC/L80 |
256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL |
Samsung Electronic |
50 |
K4S561632A-TC/L1H |
256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL |
Samsung Electronic |
51 |
K4S561632A-TC/L1L |
256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL |
Samsung Electronic |
52 |
K4S561632A-TC/L75 |
256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL |
Samsung Electronic |
53 |
K4S561632A-TC/L80 |
256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL |
Samsung Electronic |
54 |
K6L0908C2A-TB55 |
64Kx8 bit Low Power CMOS Static RAM |
Samsung Electronic |
55 |
K6L0908C2A-TB70 |
64Kx8 bit Low Power CMOS Static RAM |
Samsung Electronic |
56 |
MAX6319LHUK32A-T |
Microprocessor supervisory circuit with manual reset (manual reset input, reset outputs active-low,push/pull and active-high, push/pull).Factory-trimmed reset threshold(typ) 3.200V, reset timeout(min) 1ms |
MAXIM - Dallas Semiconductor |
57 |
MAX6319LHUK42A-T |
Microprocessor supervisory circuit with manual reset (manual reset input, reset outputs active-low,push/pull and active-high, push/pull).Factory-trimmed reset threshold(typ) 4.200V, reset timeout(min) 1ms |
MAXIM - Dallas Semiconductor |
58 |
MAX6319MHUK32A-T |
Microprocessor supervisory circuit with manual reset (manual reset input, reset outputs active-high, push/pull and active-low, bidirectional).Factory-trimmed reset threshold(typ) 3.200V, reset timeout(min) 1ms |
MAXIM - Dallas Semiconductor |
59 |
MAX6319MHUK42A-T |
Microprocessor supervisory circuit with manual reset (manual reset input, reset outputs active-high, push/pull and active-low, bidirectional).Factory-trimmed reset threshold(typ) 4.200V, reset timeout(min) 1ms |
MAXIM - Dallas Semiconductor |
60 |
MAX6322HPUK32A-T |
Microprocessor supervisory circuit with manual reset (manual reset input, reset outputs active-high, push/pull and active-low, open-drain).Factory-trimmed reset threshold(typ) 3.200V, reset timeout(min) 1ms |
MAXIM - Dallas Semiconductor |
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