No. |
Part Name |
Description |
Manufacturer |
31 |
K6X1008C2D-DF55 |
128Kx8 bit Low Power CMOS Static RAM |
Samsung Electronic |
32 |
K6X1008C2D-DF70 |
128Kx8 bit Low Power CMOS Static RAM |
Samsung Electronic |
33 |
MGS13002D-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
34 |
NC2D-DC110V |
FLAT/VERTICAL TYPE HIGH POWER BIFURCATED CONTACT |
Matsushita Electric Works(Nais) |
35 |
NC2D-DC12V |
FLAT/VERTICAL TYPE HIGH POWER BIFURCATED CONTACT |
Matsushita Electric Works(Nais) |
36 |
NC2D-DC24V |
FLAT/VERTICAL TYPE HIGH POWER BIFURCATED CONTACT |
Matsushita Electric Works(Nais) |
37 |
NC2D-DC48V |
FLAT/VERTICAL TYPE HIGH POWER BIFURCATED CONTACT |
Matsushita Electric Works(Nais) |
38 |
NC2D-DC5V |
FLAT/VERTICAL TYPE HIGH POWER BIFURCATED CONTACT |
Matsushita Electric Works(Nais) |
39 |
NC2D-DC6V |
FLAT/VERTICAL TYPE HIGH POWER BIFURCATED CONTACT |
Matsushita Electric Works(Nais) |
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