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Datasheets for 2K R

Datasheets found :: 439
Page: | 1 | 2 | 3 | 4 | 5 | 6 |
No. Part Name Description Manufacturer
31 HYB5117805BJ-50 2M x 8 - Bit Dynamic RAM 2k Refresh Siemens
32 HYB5117805BJ-60 2M x 8 - Bit Dynamic RAM 2k Refresh Siemens
33 HYB5117805BJ-70 2M x 8 - Bit Dynamic RAM 2k Refresh Siemens
34 HYB5117805BSJ-50 -2M x 8 - Bit Dynamic RAM 2k Refresh Siemens
35 HYB5117805BSJ-50 -2M x 8 - Bit Dynamic RAM 2k Refresh Siemens
36 HYB5117805BSJ-50 2M x 8-Bit Dynamic RAM 2k Refresh Siemens
37 HYB5117805BSJ-50-60 2M x 8-Bit Dynamic RAM 2k Refresh Siemens
38 HYB5117805BSJ-60 2M x 8-Bit Dynamic RAM 2k Refresh Siemens
39 K4E160411D-B 4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle. Samsung Electronic
40 K4E160411D-F 4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle. Samsung Electronic
41 K4E160412D-B 4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle. Samsung Electronic
42 K4E160412D-F 4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle. Samsung Electronic
43 K4E160811D-B 2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle. Samsung Electronic
44 K4E160811D-F 2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle. Samsung Electronic
45 K4E160812D-B 2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle. Samsung Electronic
46 K4E160812D-F 2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle. Samsung Electronic
47 K4F160411D-B 4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 2K refresh cycle. Samsung Electronic
48 K4F160411D-F 4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 2K refresh cycle. Samsung Electronic
49 K4F160412D-B 4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 2K refresh cycle. Samsung Electronic
50 K4F160412D-F 4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 2K refresh cycle. Samsung Electronic
51 K4F160811D-B 2M x 8 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 2K refresh cycle. Samsung Electronic
52 K4F160811D-F 2M x 8 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 2K refresh cycle. Samsung Electronic
53 K4F160812D-B 2M x 8 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 2K refresh cycle. Samsung Electronic
54 K4F160812D-F 2M x 8 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 2K refresh cycle. Samsung Electronic
55 KMM372C213CK 2M x 72 DRAM DIMM with ECC using 2Mx8, 2K Refresh, 5V Samsung Electronic
56 KMM372C213CS 2M x 72 DRAM DIMM with ECC using 2Mx8, 2K Refresh, 5V Samsung Electronic
57 KMM372C400CK 4M x 72 DRAM DIMM with ECC using 4Mx4, 4K 2K Refresh, 5V Samsung Electronic
58 KMM372C400CS 4M x 72 DRAM DIMM with ECC using 4Mx4, 4K 2K Refresh, 5V Samsung Electronic
59 KMM372C410CK 4M x 72 DRAM DIMM with ECC using 4Mx4, 4K 2K Refresh, 5V Samsung Electronic
60 KMM372C410CS 4M x 72 DRAM DIMM with ECC using 4Mx4, 4K 2K Refresh, 5V Samsung Electronic


Datasheets found :: 439
Page: | 1 | 2 | 3 | 4 | 5 | 6 |



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