No. |
Part Name |
Description |
Manufacturer |
31 |
HYB5117805BJ-50 |
2M x 8 - Bit Dynamic RAM 2k Refresh |
Siemens |
32 |
HYB5117805BJ-60 |
2M x 8 - Bit Dynamic RAM 2k Refresh |
Siemens |
33 |
HYB5117805BJ-70 |
2M x 8 - Bit Dynamic RAM 2k Refresh |
Siemens |
34 |
HYB5117805BSJ-50 |
-2M x 8 - Bit Dynamic RAM 2k Refresh |
Siemens |
35 |
HYB5117805BSJ-50 |
-2M x 8 - Bit Dynamic RAM 2k Refresh |
Siemens |
36 |
HYB5117805BSJ-50 |
2M x 8-Bit Dynamic RAM 2k Refresh |
Siemens |
37 |
HYB5117805BSJ-50-60 |
2M x 8-Bit Dynamic RAM 2k Refresh |
Siemens |
38 |
HYB5117805BSJ-60 |
2M x 8-Bit Dynamic RAM 2k Refresh |
Siemens |
39 |
K4E160411D-B |
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle. |
Samsung Electronic |
40 |
K4E160411D-F |
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle. |
Samsung Electronic |
41 |
K4E160412D-B |
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle. |
Samsung Electronic |
42 |
K4E160412D-F |
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle. |
Samsung Electronic |
43 |
K4E160811D-B |
2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle. |
Samsung Electronic |
44 |
K4E160811D-F |
2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle. |
Samsung Electronic |
45 |
K4E160812D-B |
2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle. |
Samsung Electronic |
46 |
K4E160812D-F |
2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle. |
Samsung Electronic |
47 |
K4F160411D-B |
4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 2K refresh cycle. |
Samsung Electronic |
48 |
K4F160411D-F |
4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 2K refresh cycle. |
Samsung Electronic |
49 |
K4F160412D-B |
4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 2K refresh cycle. |
Samsung Electronic |
50 |
K4F160412D-F |
4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 2K refresh cycle. |
Samsung Electronic |
51 |
K4F160811D-B |
2M x 8 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 2K refresh cycle. |
Samsung Electronic |
52 |
K4F160811D-F |
2M x 8 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 2K refresh cycle. |
Samsung Electronic |
53 |
K4F160812D-B |
2M x 8 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 2K refresh cycle. |
Samsung Electronic |
54 |
K4F160812D-F |
2M x 8 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 2K refresh cycle. |
Samsung Electronic |
55 |
KMM372C213CK |
2M x 72 DRAM DIMM with ECC using 2Mx8, 2K Refresh, 5V |
Samsung Electronic |
56 |
KMM372C213CS |
2M x 72 DRAM DIMM with ECC using 2Mx8, 2K Refresh, 5V |
Samsung Electronic |
57 |
KMM372C400CK |
4M x 72 DRAM DIMM with ECC using 4Mx4, 4K 2K Refresh, 5V |
Samsung Electronic |
58 |
KMM372C400CS |
4M x 72 DRAM DIMM with ECC using 4Mx4, 4K 2K Refresh, 5V |
Samsung Electronic |
59 |
KMM372C410CK |
4M x 72 DRAM DIMM with ECC using 4Mx4, 4K 2K Refresh, 5V |
Samsung Electronic |
60 |
KMM372C410CS |
4M x 72 DRAM DIMM with ECC using 4Mx4, 4K 2K Refresh, 5V |
Samsung Electronic |
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