No. |
Part Name |
Description |
Manufacturer |
31 |
2N5302HS |
Trans GP BJT NPN 60V 30A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
32 |
2N5303 |
Leaded Power Transistor General Purpose |
Central Semiconductor |
33 |
2N5303 |
High current, high power, high speed N-P-N power transistor. 80V, 200W. |
General Electric Solid State |
34 |
2N5303 |
NPN Transistor |
Microsemi |
35 |
2N5303 |
POWER TRANSISTORS(200W) |
MOSPEC Semiconductor |
36 |
2N5303 |
High-power NPN silicon transistor |
Motorola |
37 |
2N5303 |
Silicon NPN Transistor |
Motorola |
38 |
2N5303 |
Trans GP BJT NPN 80V 20A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
39 |
2N5303 |
POWER TRANSISTORS NPN SILICON |
ON Semiconductor |
40 |
2N5303 |
Silicon NPN Power Transistors TO-3 package |
Savantic |
41 |
2N5303 |
Silicon NPN Power Transistor, TO-3 (cont d) package, PNP Complement 2N5745 |
Silicon Transistor Corporation |
42 |
2N5303 |
80 V, 30 A, 200 W, NPN silicon power transistor |
Texas Instruments |
43 |
2N5303 |
Silicon NPN triple diffused power transistor |
TOSHIBA |
44 |
2N5304 |
Radiation-Resistant NPN Silicon Power Transistor 10A 40V 25W |
Motorola |
45 |
2N5305 |
SILICON DARLINGTON TRANSISTORS |
General Electric Solid State |
46 |
2N5305 |
Silicon NPN Transistor |
Motorola |
47 |
2N5305 |
NPN darlington transistor |
National Semiconductor |
48 |
2N5305 |
Trans GP BJT NPN 60V 30A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
49 |
2N5306 |
Leaded Small Signal Transistor Darlington |
Central Semiconductor |
50 |
2N5306 |
NPN Darlington Transistor |
Fairchild Semiconductor |
51 |
2N5306 |
Planar epitaxial passivated NPN silicon Darlington transistor. 25V, 300mA. |
General Electric Solid State |
52 |
2N5306 |
Silicon NPN Transistor |
Motorola |
53 |
2N5306 |
NPN darlington transistor |
National Semiconductor |
54 |
2N5306A |
SILICON DARLINGTON TRANSISTORS |
General Electric Solid State |
55 |
2N5306_D74Z |
NPN Darlington Transistor |
Fairchild Semiconductor |
56 |
2N5307 |
NPN General Purpose Amplifier |
Fairchild Semiconductor |
57 |
2N5307 |
Planar epitaxial passivated NPN silicon Darlington transistor. 40V, 300mA. |
General Electric Solid State |
58 |
2N5307 |
NPN DARLINGTON AMPLIFIER |
Micro Electronics |
59 |
2N5307 |
Silicon NPN Transistor |
Motorola |
60 |
2N5307 |
NPN darlington transistor |
National Semiconductor |
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