No. |
Part Name |
Description |
Manufacturer |
31 |
2N5614 |
Silicon NPN Power Transistors TO-3 package |
Savantic |
32 |
2N5615 |
Silicon PNP Power Transistors TO-3 package |
Savantic |
33 |
2N5616 |
Silicon NPN Power Transistors TO-3 package |
Savantic |
34 |
2N5617 |
Silicon PNP Power Transistors TO-3 package |
Savantic |
35 |
2N5617 |
Bipolar PNP Device in a Hermetically sealed TO3 Metal Package |
SemeLAB |
36 |
2N5618 |
Silicon NPN Power Transistors TO-3 package |
Savantic |
37 |
2N5619 |
Silicon PNP Power Transistors TO-3 package |
Savantic |
38 |
2N5619 |
Bipolar PNP Device in a Hermetically sealed to3 Metal Package. |
SemeLAB |
39 |
2N5620 |
Silicon NPN Power Transistors TO-3 package |
Savantic |
40 |
2N5620 |
Bipolar NPN Device in a Hermetically sealed TO3 Metal Package |
SemeLAB |
41 |
2N5621 |
Silicon PNP Power Transistors TO-3 package |
Savantic |
42 |
2N5622 |
Silicon NPN Power Transistors TO-3 package |
Savantic |
43 |
2N5622 |
Bipolar NPN Device in a Hermetically sealed TO3 Metal Package |
SemeLAB |
44 |
2N5623 |
Silicon PNP Power Transistors TO-3 package |
Savantic |
45 |
2N5623 |
Bipolar PNP Device in a Hermetically sealed TO3 Metal Package |
SemeLAB |
46 |
2N5624 |
Silicon NPN Power Transistors TO-3 package |
Savantic |
47 |
2N5625 |
Silicon PNP Power Transistors TO-3 package |
Savantic |
48 |
2N5626 |
Silicon NPN Power Transistors TO-3 package |
Savantic |
49 |
2N5627 |
Silicon PNP Power Transistors TO-3 package |
Savantic |
50 |
2N5628 |
Silicon NPN Power Transistors TO-3 package |
Savantic |
51 |
2N5629 |
COMPLEMENTARY SILICON POWER TRANSISTORS |
Central Semiconductor |
52 |
2N5629 |
Silicon N-P-N epitaxial-base high-power transistor. 100V, 200W. |
General Electric Solid State |
53 |
2N5629 |
16A power NPN transistor complementary silicon 200W |
Motorola |
54 |
2N5629 |
Trans GP BJT NPN 100V 16A 3-Pin(2+Tab) TO-3 Sleeve |
New Jersey Semiconductor |
55 |
2N5629 |
Silicon NPN Power Transistors TO-3 package |
Savantic |
56 |
2N563 |
Germanium PNP Transistor |
Motorola |
57 |
2N5630 |
COMPLEMENTARY SILICON POWER TRANSISTORS |
Central Semiconductor |
58 |
2N5630 |
Silicon N-P-N epitaxial-base high-power transistor. 120V, 200W. |
General Electric Solid State |
59 |
2N5630 |
Collector-emitter/base voltage: 120Vdc; 16Amp; high-voltage, high-power transistor. For high power audio amplifier applications and high voltage switching regulator circuits |
Motorola |
60 |
2N5630 |
Trans GP BJT NPN 120V 16A 3-Pin(2+Tab) TO-3 Sleeve |
New Jersey Semiconductor |
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