No. |
Part Name |
Description |
Manufacturer |
31 |
2N5911_D |
Dual N-channel JFET. High frequency amplifier. |
Intersil |
32 |
2N5911_W |
Dual N-channel JFET. High frequency amplifier. |
Intersil |
33 |
2N5912 |
Dual N-Channel JFET High Frequency Amplifier |
Calogic |
34 |
2N5912 |
Dual N-Channel Junction Field-Effect Transistor |
CCSIT-CE |
35 |
2N5912 |
Dual N-Channel silicon junction field-effect transistor |
InterFET Corporation |
36 |
2N5912 |
Dual N-channel JFET. High frequency amplifier. |
Intersil |
37 |
2N5912 |
Wideband, High Gain, Monolithic Dual, N- Channel JFET |
Linear Systems |
38 |
2N5912 |
N-CHANNEL DUAL SILICON JUNCTION FET |
New Jersey Semiconductor |
39 |
2N5912 |
Matched High Gain |
Vishay |
40 |
2N5912C |
Wideband, High Gain, Monolithic Dual, N- Channel JFET |
Linear Systems |
41 |
2N5912_D |
Dual N-channel JFET. High frequency amplifier. |
Intersil |
42 |
2N5912_W |
Dual N-channel JFET. High frequency amplifier. |
Intersil |
43 |
2N5913 |
Trans GP BJT PNP 20V 0.05A |
New Jersey Semiconductor |
44 |
2N5913 |
Silicon NPN Overalay RF Transistor, 12.5 Volt, for class-C VHF/UHF amplifiers |
RCA Solid State |
45 |
2N5914 |
High-Power Silicon NPN Overlay RF Transistor |
RCA Solid State |
46 |
2N5915 |
High-Power Silicon NPN Overlay RF Transistor |
RCA Solid State |
47 |
2N5916 |
High-Gain Silicon NPN Overlay Transistor, Warning - ceramic portion of these transistors contain BERYLLIUM OXIDE |
RCA Solid State |
48 |
2N5917 |
High-Gain Silicon NPN Overlay Transistor, Warning - ceramic portion of these transistors contain BERYLLIUM OXIDE |
RCA Solid State |
49 |
2N5918 |
10W, 400-MHz High-Gain Silicon NPN Emitter-Ballasted Overaly RF Transistor |
RCA Solid State |
50 |
2N5919 |
UHF Power Generation Using RF Power Transistor - Application Note |
RCA Solid State |
51 |
2N5919A |
16W, 400-MHz, Silicon NPN Emitter-Ballasted Overlay Transistor |
RCA Solid State |
52 |
2N592 |
Germanium PNP Transistor |
Motorola |
53 |
2N5920 |
2W, 2GHz, Emitter-Ballasted Silicon NPN Overlay RF Microwave Transistor |
RCA Solid State |
54 |
2N5921 |
5W, 2GHz, Emitter-Ballasted Silicon NPN Overlay RF Transistor |
RCA Solid State |
55 |
2N5929 |
Silicon NPN Power Transistor, TO-3 (cont d) package |
Silicon Transistor Corporation |
56 |
2N593 |
Germanium PNP Transistor |
Motorola |
57 |
2N593 |
Trans GP BJT PNP 80V 6A 3-Pin(2+Tab) TO-66 Sleeve |
New Jersey Semiconductor |
58 |
2N5930 |
Bipolar NPN Device in a Hermetically sealed TO3 Metal Package |
SemeLAB |
59 |
2N5930 |
Silicon NPN Power Transistor, TO-3 (cont d) package |
Silicon Transistor Corporation |
60 |
2N5931 |
Silicon NPN Power Transistor, TO-3 (cont d) package |
Silicon Transistor Corporation |
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