No. |
Part Name |
Description |
Manufacturer |
31 |
2N6103 |
Single diffused hometaxial silicon NPN medium power transistor |
SGS-ATES |
32 |
2N6103 |
Silicon power transistor |
SGS-ATES |
33 |
2N6103 |
Silicon HOMETAXIAL NPN transistor, medium power linear and switching applications |
SGS-ATES |
34 |
2N6104 |
Trans GP BJT PNP 50V 7A 3-Pin(3+Tab) TO-220 Box |
New Jersey Semiconductor |
35 |
2N6104 |
Characteristics and Broadband (225-to-400MHz) Applications of the RCA-2N6104 and 2N6105 UHF Power Transistors - App. Note |
RCA Solid State |
36 |
2N6104 |
Characteristics and Broadband (225-to-400MHz) Applications of the RCA-2N6104 and 2N6105 UHF Power Transistors - App. Note |
RCA Solid State |
37 |
2N6104 |
Characteristics and Broadband (225-to-400MHz) Applications of the RCA-2N6104 and 2N6105 UHF Power Transistors - App. Note |
RCA Solid State |
38 |
2N6104 |
30W 400MHz Broadband Emitter-Ballasted Silicon NPN Overlay Transistor |
RCA Solid State |
39 |
2N6105 |
Trans GP BJT PNP 50V 7A 3-Pin(3+Tab) TO-220 Box |
New Jersey Semiconductor |
40 |
2N6105 |
60- and 100-Watt Broadband (225-to-400-MHz) Push-Pull RF Amplifiers Using RCA-2N6105 VHF/UHF Power Transistors - App. Note |
RCA Solid State |
41 |
2N6105 |
60- and 100-Watt Broadband (225-to-400-MHz) Push-Pull RF Amplifiers Using RCA-2N6105 VHF/UHF Power Transistors - App. Note |
RCA Solid State |
42 |
2N6105 |
Characteristics and Broadband (225-to-400MHz) Applications of the RCA-2N6104 and 2N6105 UHF Power Transistors - App. Note |
RCA Solid State |
43 |
2N6105 |
Characteristics and Broadband (225-to-400MHz) Applications of the RCA-2N6104 and 2N6105 UHF Power Transistors - App. Note |
RCA Solid State |
44 |
2N6105 |
Characteristics and Broadband (225-to-400MHz) Applications of the RCA-2N6104 and 2N6105 UHF Power Transistors - App. Note |
RCA Solid State |
45 |
2N6105 |
Hotspotting in RF Power Transistors - Application Note |
RCA Solid State |
46 |
2N6105 |
30W 400MHz Broadband Emitter-Ballasted Silicon NPN Overlay Transistor |
RCA Solid State |
47 |
2N6105A |
Trans GP BJT PNP 50V 7A 3-Pin(3+Tab) TO-220 Box |
New Jersey Semiconductor |
48 |
2N6106 |
EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS |
Boca Semiconductor Corporation |
49 |
2N6106 |
Epitaxial-base, silicon P-N-P VERSAWATT transistor. -80V. |
General Electric Solid State |
50 |
2N6106 |
PNP Power Transistor |
National Semiconductor |
51 |
2N6106 |
Trans GP BJT PNP 70V 7A 3-Pin(3+Tab) TO-213AA |
New Jersey Semiconductor |
52 |
2N6106 |
Silicon PNP Power Transistors TO-220 package |
Savantic |
53 |
2N6107 |
EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS |
Boca Semiconductor Corporation |
54 |
2N6107 |
Leaded Power Transistor General Purpose |
Central Semiconductor |
55 |
2N6107 |
40.000W Medium Power PNP Plastic Leaded Transistor. 70V Vceo, 7.000A Ic, 2 hFE. |
Continental Device India Limited |
56 |
2N6107 |
PNP power transistor |
FERRANTI |
57 |
2N6107 |
Epitaxial-base, silicon P-N-P VERSAWATT transistor. -80V. |
General Electric Solid State |
58 |
2N6107 |
TO-220 Plastic-Encapsulate Biploar Transistors |
Micro Commercial Components |
59 |
2N6107 |
POWER TRANSISTORS(7A,40W) |
MOSPEC Semiconductor |
60 |
2N6107 |
7A complementary silicon plastic 65W power PNP transistor |
Motorola |
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