No. |
Part Name |
Description |
Manufacturer |
31 |
2SC1626 |
Silicon NPN Power Transistors TO-220C package |
Savantic |
32 |
2SC1626 |
Silicon NPN epitaxial medium power transistor |
TOSHIBA |
33 |
2SC1627 |
Transistor Silicon NPN Epitaxial Type (PCT process) Driver Stage Amplifier Applications Voltage Amplifier Applications |
TOSHIBA |
34 |
2SC1627A |
TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) DRIVER STAGE AMPLIFIER APPLICATIONS. VOLTAGE AMPLIFIER APPLICATIONS |
TOSHIBA |
35 |
2SC1645 |
2SC1545M |
ROHM |
36 |
2SC1645S |
Transistors > Small Signal Bipolar Transistors(up to 0.6W) |
ROHM |
37 |
2SC1651S |
Transistors > Small Signal Bipolar Transistors(up to 0.6W) |
ROHM |
38 |
2SC1652 |
Medium Power Amp. Epitaxial Planar NPN Silicon Transistors |
ROHM |
39 |
2SC1653 |
DISPLAY TUBE DRIVE ,HIGH VOLTAGE SWITCHING NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD |
NEC |
40 |
2SC1653-L |
Silicon transistor |
NEC |
41 |
2SC1653-T1B |
Silicon transistor |
NEC |
42 |
2SC1653-T2B |
Silicon transistor |
NEC |
43 |
2SC1654 |
DISPLAY TUBE DRIVE ,HIGH VOLTAGE SWITCHING NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD |
NEC |
44 |
2SC1654-L |
Silicon transistor |
NEC |
45 |
2SC1654-T1B |
Silicon transistor |
NEC |
46 |
2SC1654-T2B |
Silicon transistor |
NEC |
47 |
2SC1667 |
Silicon NPN Power Transistors TO-3 package |
Savantic |
48 |
2SC1672 |
Silicon NPN Power Transistors TO-3 package |
Savantic |
49 |
2SC1672 |
Medium Power Amplifiers and Switches |
Unknow |
50 |
2SC1674 |
NPN Silicon Transistor |
NEC |
51 |
2SC1674 |
TO-92 Plastic-Encapsulated Transistors |
TRANSYS Electronics Limited |
52 |
2SC1674 |
TV PIF amplifier, FM tuner RF amplifier, mixer, occillator. Collector-base voltage Vcbo = 30V. Collector-emitter voltage Vceo = 20V. Emitter-base voltage Vebo = 4V. Collector dissipation Pc(max) = 250mW. Collector current Ic = 20mA. |
USHA India LTD |
53 |
2SC1675 |
NPN SILICON TRANSISTOR |
Micro Electronics |
54 |
2SC1675 |
NPN Silicon Transistor |
NEC |
55 |
2SC1675 |
FM/AM RF amplifier, mixer, converter, oscillator,IF. Collector-base voltage Vcbo = 50V. Collector-emitter voltage Vceo = 30V. Emitter-base voltage Vebo = 5V. Collector dissipation Pc(max) = 250mW. Collector current Ic = 50mA. |
USHA India LTD |
56 |
2SC1678 |
Silicon NPN Power Transistors TO-220 package |
Savantic |
57 |
2SC1678 |
SILICON NPN EPITAXIAL PLANAR TYPE |
TOSHIBA |
58 |
2SC1678 |
SILICON NPN EPITAXIAL PLANAR TYPE |
TOSHIBA |
59 |
2SC1683 |
Silicon NPN Power Transistors TO-220C package |
Savantic |
60 |
2SC1683 |
Si NPN Triple Diffused Mesa |
Unknow |
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