No. |
Part Name |
Description |
Manufacturer |
31 |
1210UFC |
1000 V single phase bridge 3.0 A forward current, 70 ns recovery time |
Voltage Multipliers |
32 |
1210UFE |
1000 V single phase bridge 3.0 A forward current, 70 ns recovery time |
Voltage Multipliers |
33 |
1224VGC |
3.0 MM ROUND TYPE LED LAMPS |
Everlight Electronics |
34 |
15KP120A |
Glass passivated junction transient voltage suppressor. Vrwm = 120 V. Vbr(min/max) = 133/153.0 V @ It = 5.0 mA. Ir = 10 uA. Vc = 193 V @ Ipp = 78 A. |
Panjit International Inc |
35 |
15KP120CA |
Glass passivated junction transient voltage suppressor. Vrwm = 120 V. Vbr(min/max) = 133/153.0 V @ It = 5.0 mA. Ir = 10 uA. Vc = 193 V @ Ipp = 78 A. |
Panjit International Inc |
36 |
1N4372A |
500mW, silicon zener diode. Zener voltage 3.0 V. Test current 20 mA. +-5% tolerance. |
Jinan Gude Electronic Device |
37 |
1N4372C |
500mW, silicon zener diode. Zener voltage 3.0 V. Test current 20 mA. +-2% tolerance. |
Jinan Gude Electronic Device |
38 |
1N4372D |
500mW, silicon zener diode. Zener voltage 3.0 V. Test current 20 mA. +-1% tolerance. |
Jinan Gude Electronic Device |
39 |
1N4619UR-1 |
3.0 volt zener diode |
Compensated Devices Incorporated |
40 |
1N4743 |
1 W silicon zener diode. Nominal zener voltage 13.0 V. |
Fairchild Semiconductor |
41 |
1N4752 |
1 W silicon zener diode. Nominal zener voltage 33.0 V. |
Fairchild Semiconductor |
42 |
1N5225A |
3.0 V, 20 mA, zener diode |
Leshan Radio Company |
43 |
1N5225AUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 3.0 V. Tolerance +-10%. |
Microsemi |
44 |
1N5225BUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 3.0 V. Tolerance +-5%. |
Microsemi |
45 |
1N5225C |
3.0 V, 20 mA, zener diode |
Leshan Radio Company |
46 |
1N5225D |
3.0 V, 20 mA, zener diode |
Leshan Radio Company |
47 |
1N5225UR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 3.0 V. |
Microsemi |
48 |
1N5243 |
500 mW silicon zener diode. Nominal zener voltage 13.0 V. |
Fairchild Semiconductor |
49 |
1N5257 |
500 mW silicon zener diode. Nominal zener voltage 33.0 V. |
Fairchild Semiconductor |
50 |
1N5260A |
43 V, 3.0 mA, zener diode |
Leshan Radio Company |
51 |
1N5260C |
43 V, 3.0 mA, zener diode |
Leshan Radio Company |
52 |
1N5260D |
43 V, 3.0 mA, zener diode |
Leshan Radio Company |
53 |
1N5400 |
3.0 AMP SILICON RECTIFIERS |
Bytes |
54 |
1N5400 |
3.0 AMP SILICON RECTIFIERS |
Formosa MS |
55 |
1N5400 |
3.0 AMPS.SILICON RECTIFIERS |
Jinan Gude Electronic Device |
56 |
1N5400 |
STANDARD RECOVERY RECTIFIERS 50-1000 VOLTS 3.0 AMPERE |
Motorola |
57 |
1N5400 |
HIGH CURRENT PLASTIC SILICON RECTIFIER(VOLTAGE - 50 to 1000 Volts CURRENT - 3.0 Amperes) |
Panjit International Inc |
58 |
1N5400 |
3.0 AMPS. SILICON RECTIFIERS |
Surge Components |
59 |
1N5400 |
SILICON RECTIFIER(VOLTAGE RANGE - 50 to 1000 Volts CURRENT - 3.0 Amperes) |
Wing Shing Computer Components |
60 |
1N5400G |
3.0 AMP GLASS PASSIVATED RECTIFIERS |
Bytes |
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