No. |
Part Name |
Description |
Manufacturer |
31 |
1N4752 |
1.0 Watt Zener Diode 3.3 to 100 Volts |
Micro Commercial Components |
32 |
1N4753 |
1.0 Watt Zener Diode 3.3 to 100 Volts |
Micro Commercial Components |
33 |
1N4754 |
1.0 Watt Zener Diode 3.3 to 100 Volts |
Micro Commercial Components |
34 |
1N4755 |
1.0 Watt Zener Diode 3.3 to 100 Volts |
Micro Commercial Components |
35 |
1N4756 |
1.0 Watt Zener Diode 3.3 to 100 Volts |
Micro Commercial Components |
36 |
1N4757 |
1.0 Watt Zener Diode 3.3 to 100 Volts |
Micro Commercial Components |
37 |
1N4758 |
1.0 Watt Zener Diode 3.3 to 100 Volts |
Micro Commercial Components |
38 |
1N4759 |
1.0 Watt Zener Diode 3.3 to 100 Volts |
Micro Commercial Components |
39 |
1N4760 |
1.0 Watt Zener Diode 3.3 to 100 Volts |
Micro Commercial Components |
40 |
1N4761 |
1.0 Watt Zener Diode 3.3 to 100 Volts |
Micro Commercial Components |
41 |
1N4762 |
1.0 Watt Zener Diode 3.3 to 100 Volts |
Micro Commercial Components |
42 |
1N4763 |
1.0 Watt Zener Diode 3.3 to 100 Volts |
Micro Commercial Components |
43 |
1N4764 |
1.0 Watt Zener Diode 3.3 to 100 Volts |
Micro Commercial Components |
44 |
1N5226 |
500 mW silicon zener diode. Nominal zener voltage 3.3 V. |
Fairchild Semiconductor |
45 |
1N5226 |
500mW, 3.3 Volts Silicon Glass Zener Diode |
ITT Semiconductors |
46 |
1N5226A |
3.3 V, 20 mA, zener diode |
Leshan Radio Company |
47 |
1N5226AUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 3.3 V. Tolerance +-10%. |
Microsemi |
48 |
1N5226BUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 3.3 V. Tolerance +-5%. |
Microsemi |
49 |
1N5226C |
3.3 V, 20 mA, zener diode |
Leshan Radio Company |
50 |
1N5226D |
3.3 V, 20 mA, zener diode |
Leshan Radio Company |
51 |
1N5226UR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 3.3 V. |
Microsemi |
52 |
1N5518A |
0.4W, low voltage avalanche diode. Nominal zener voltage 3.3 V. Test current 20 mAdc. +-10% tolerance. |
Jinan Gude Electronic Device |
53 |
1N5518B |
0.4 W, low voltage avalanche diode. Nominal zener voltage 3.3 V. Test current 20 mAdc. +-5% tolerance. |
Jinan Gude Electronic Device |
54 |
1N5518D |
0.4 W, low voltage avalanche diode. Nominal zener voltage 3.3 V. Test current 20 mAdc. +-1% tolerance. |
Jinan Gude Electronic Device |
55 |
1N746 |
3.3 V, 400 mW silicon linear diode |
BKC International Electronics |
56 |
1N746 |
500 mW silicon linear diode. Max zener impedance 28.0 Ohm, max zener voltage 3.3 V (Iz 20mA). |
Fairchild Semiconductor |
57 |
1N746 |
400mW, 3.3 Volts Silicon Glass Zener Diode |
ITT Semiconductors |
58 |
1N746A |
3.3 V, 400 mW silicon linear diode |
BKC International Electronics |
59 |
1N746A |
500mW, silicon zener diode. Zener voltage 3.3 V. Test current 20 mA. +-5% tolerance. |
Jinan Gude Electronic Device |
60 |
1N746B |
3.3 V, 20 mA, zener diode |
Leshan Radio Company |
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