| No. |
Part Name |
Description |
Manufacturer |
| 31 |
AQY210EHA |
PhotoMOS relay, GU (general use)-E type. 1-channel (form A). AC/DC type. I/O isolation voltage reinforced 5,000V. Output rating: load voltage 350 V, load current 130 mA. |
Matsushita Electric Works(Nais) |
| 32 |
AQY210EHAX |
PhotoMOS relay, GU (general use)-E type. 1-channel (form A). AC/DC type. I/O isolation voltage reinforced 5,000V. Output rating: load voltage 350 V, load current 130 mA. |
Matsushita Electric Works(Nais) |
| 33 |
AQY210EHAZ |
PhotoMOS relay, GU (general use)-E type. 1-channel (form A). AC/DC type. I/O isolation voltage reinforced 5,000V. Output rating: load voltage 350 V, load current 130 mA. |
Matsushita Electric Works(Nais) |
| 34 |
AQY410EH |
PhotoMOS relay, GU (general use)-E type, 1-channel (form B). AC/DC type. I/O isolastion reinforced 5,000V. Output rating: load voltage 350 V, load current 130 mA. |
Matsushita Electric Works(Nais) |
| 35 |
AQY410EHA |
PhotoMOS relay, GU (general use)-E type, 1-channel (form B). AC/DC type. I/O isolastion reinforced 5,000V. Output rating: load voltage 350 V, load current 130 mA. |
Matsushita Electric Works(Nais) |
| 36 |
AQY410EHAX |
PhotoMOS relay, GU (general use)-E type, 1-channel (form B). AC/DC type. I/O isolastion reinforced 5,000V. Output rating: load voltage 350 V, load current 130 mA. |
Matsushita Electric Works(Nais) |
| 37 |
AQY410EHAZ |
PhotoMOS relay, GU (general use)-E type, 1-channel (form B). AC/DC type. I/O isolastion reinforced 5,000V. Output rating: load voltage 350 V, load current 130 mA. |
Matsushita Electric Works(Nais) |
| 38 |
ASB00340BD |
40 V, 30 mA, SMD schottky barrier diode |
Anachip |
| 39 |
ASB00340BF |
40 V, 30 mA, SMD schottky barrier diode |
Anachip |
| 40 |
ASM1232LP |
5 V, 30 mA power supply monitor and reset circuit |
Alliance Semiconductor |
| 41 |
ASM1232LPCMA |
5 V, 30 mA power supply monitor and reset circuit |
Alliance Semiconductor |
| 42 |
ASM1232LPEMA |
5 V, 30 mA power supply monitor and reset circuit |
Alliance Semiconductor |
| 43 |
ASM1232LPN |
5 V, 30 mA power supply monitor and reset circuit |
Alliance Semiconductor |
| 44 |
ASM1232LPS |
5 V, 30 mA power supply monitor and reset circuit |
Alliance Semiconductor |
| 45 |
ASM1232LPS-2 |
5 V, 30 mA power supply monitor and reset circuit |
Alliance Semiconductor |
| 46 |
ASM1232LPSN |
5 V, 30 mA power supply monitor and reset circuit |
Alliance Semiconductor |
| 47 |
ASM1232LPSN-2 |
5 V, 30 mA power supply monitor and reset circuit |
Alliance Semiconductor |
| 48 |
BFP183 |
RF-Bipolar - For low-noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA |
Infineon |
| 49 |
BFP183 |
NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA) |
Siemens |
| 50 |
BFP183W |
RF-Bipolar - For low-noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA |
Infineon |
| 51 |
BFP183W |
NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA) |
Siemens |
| 52 |
BFP93 |
NPN Silicon RF Transistor (For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 5 mA to 30 mA) |
Siemens |
| 53 |
BFP93A |
NPN Silicon RF Transistor (For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 5 mA to 30 mA) |
Siemens |
| 54 |
BFQ72 |
NPN Silicon RF Transistor (For low-distortion broadband amplifiers up to 2 GHz at collector currents from 10 mA to 30 mA.) |
Siemens |
| 55 |
BFQ75 |
PNP Silicon RF Transistor (For broadband amplifiers up to 2 GHz at collector currents from 5 mA to 30 mA.) |
Siemens |
| 56 |
BFR93AW |
NPN Silicon RF Transistor (For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 5 mA to 30 mA) |
Siemens |
| 57 |
BFR93P |
NPN Silicon RF Transistor (For low-distortion broadband amplifiers up to 1 GHz at collector currents from 2 mA to 30 mA.) |
Siemens |
| 58 |
BIR-HL033A |
30 mA, surface mount infrared emittihg diode |
Yellow Stone Corp |
| 59 |
BIR-HM133A |
30 mA, surface mount infrared emittihg diode |
Yellow Stone Corp |
| 60 |
BIR-HN033A |
30 mA, surface mount infrared emittihg diode |
Yellow Stone Corp |
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