| No. |
Part Name |
Description |
Manufacturer |
| 31 |
IRFI3306G |
60V Single N-Channel HEXFET Power MOSFET in a TO-220 Full-Pak package |
International Rectifier |
| 32 |
IRFI3306GPBF |
60V Single N-Channel HEXFET Power MOSFET in a TO-220 Full-Pak package |
International Rectifier |
| 33 |
KBP306G |
BRIDGE RECTIFIERS |
Micro Commercial Components |
| 34 |
KBP306G |
Bridge: Standard |
Taiwan Semiconductor |
| 35 |
KBPC306G |
SINGLE PHASE 3.0 AMPS. GLASS PASSIVATED BRIDGE RECTIFIERS |
Jinan Gude Electronic Device |
| 36 |
KBPC306G |
3.0A GLASS PASSIVATED BRIDGE RECTIFIER |
Won-Top Electronics |
| 37 |
KBPM306G |
Bridge Rectifiers |
America Semiconductor |
| 38 |
LNJ306G5TR02 |
Opto-Electronic Device - Visible Light Emitting Diodes - Chip LEDs |
Panasonic |
| 39 |
LNJ306G5TRW |
Opto-Electronic Device - Visible Light Emitting Diodes - Chip LEDs |
Panasonic |
| 40 |
LNJ306G5URA |
Opto-Electronic Device - Visible Light Emitting Diodes - Chip LEDs |
Panasonic |
| 41 |
LNJ306G5URW |
Opto-Electronic Device - Visible Light Emitting Diodes - Chip LEDs |
Panasonic |
| 42 |
MC306G |
3-Input OR/NOR Gate |
Motorola |
| 43 |
NJU7306G |
11-BAND EVR FOR GRAPHIC EQUALIZER�� |
New Japan Radio |
| 44 |
NX6306GH |
1310 nm InGaAsP MQW DFB laser diode for 155 Mb/s and 622 Mb/s applications. |
NEC |
| 45 |
NX6306GI |
1310 nm InGaAsP MQW DFB laser diode for 155 Mb/s and 622 Mb/s applications. |
NEC |
| 46 |
NX6306GJ |
1310 nm InGaAsP MQW DFB laser diode for 155 Mb/s and 622 Mb/s applications. |
NEC |
| 47 |
NX6306GK |
1310 nm InGaAsP MQW DFB laser diode for 155 Mb/s and 622 Mb/s applications. |
NEC |
| 48 |
PCA9306GD1 |
Dual bidirectional I2C-bus and SMBus voltage-level translator |
NXP Semiconductors |
| 49 |
PCA9306GF |
Dual bidirectional I2C-bus and SMBus voltage-level translator |
NXP Semiconductors |
| 50 |
PCA9306GM |
Dual bidirectional I2C-bus and SMBus voltage-level translator |
NXP Semiconductors |
| 51 |
PT6306G |
1.8 Vout 3 Amp 5V-Input Adjustable Step-Down ISR |
Texas Instruments |
| 52 |
SFAD306G |
Rectifier: Superfast |
Taiwan Semiconductor |
| 53 |
UF306G |
GLASS PASSIVATED JUNCTION ULTRAFAST SWITCHING RECTIFIER(VOLTAGE - 50 to 800 Volts CURRENT - 3.0 Amperes) |
Panjit International Inc |
| 54 |
UF306G |
600 V, 3 A, glass passivated junction ultrafast switching rectifier |
TRANSYS Electronics Limited |
| 55 |
UF306G |
600 V, 3 A, glass passivated junction ultrafast switching rectifier |
TRSYS |
| 56 |
UPD16306GF-3BA |
V(dd): -0.5 to +7.0V; 1000mW; high voltage CMOS driver for PDP, EL, VFD |
NEC |
| 57 |
UPD789306GC |
ROM: 8KB; internal high-speed RAM: 512bytes; LCD display RAM: 24bytes; V(cc): -0.3 to +6.5V; 8-bit single-chip microcontroller. For remote control devices, healthcare equipment, etc. |
NEC |
| 58 |
UPD789306GC-XXX-8BS |
78K/0S series 8SC |
NEC |
| 59 |
UPD789306GC-XXX-AB8 |
78K/0S series 8SC |
NEC |
| 60 |
UPD789306GK |
ROM: 8KB; internal high-speed RAM: 512bytes; LCD display RAM: 24bytes; V(cc): -0.3 to +6.5V; 8-bit single-chip microcontroller. For remote control devices, healthcare equipment, etc. |
NEC |
| | | |
