| No. |
Part Name |
Description |
Manufacturer |
| 31 |
K4S281632B-TL1L |
128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL |
Samsung Electronic |
| 32 |
K4S281632B-TL75 |
128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL |
Samsung Electronic |
| 33 |
K4S281632B-TL80 |
128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL |
Samsung Electronic |
| 34 |
K4S510432B-TC |
512Mb B-die SDRAM Specification |
Samsung Electronic |
| 35 |
K4S510432B-TC75 |
512Mb B-die SDRAM Specification |
Samsung Electronic |
| 36 |
K4S510432B-TCL75 |
512Mb B-die SDRAM Specification |
Samsung Electronic |
| 37 |
K4S510832B-TC75 |
512Mb B-die SDRAM Specification |
Samsung Electronic |
| 38 |
K4S510832B-TCL75 |
512Mb B-die SDRAM Specification |
Samsung Electronic |
| 39 |
K4S511632B-TC75 |
512Mb B-die SDRAM Specification |
Samsung Electronic |
| 40 |
K4S511632B-TCL75 |
512Mb B-die SDRAM Specification |
Samsung Electronic |
| 41 |
K4S560432B-TC/L1H |
256Mbit SDRAM 16M x 4bit x 4 Banks Synchronous DRAM LVTTL |
Samsung Electronic |
| 42 |
K4S560432B-TC/L1L |
256Mbit SDRAM 16M x 4bit x 4 Banks Synchronous DRAM LVTTL |
Samsung Electronic |
| 43 |
K4S560432B-TC/L75 |
256Mbit SDRAM 16M x 4bit x 4 Banks Synchronous DRAM LVTTL |
Samsung Electronic |
| 44 |
K4S560832B-TC/L1H |
256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL |
Samsung Electronic |
| 45 |
K4S560832B-TC/L1L |
256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL |
Samsung Electronic |
| 46 |
K4S560832B-TC/L75 |
256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL |
Samsung Electronic |
| 47 |
K4S561632B-TC/L, TI/P |
4MB x 16Bit x 4 Banks Synchronous DRAM Data Sheet |
Samsung Electronic |
| 48 |
K4S561632B-TC/L1H |
256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL |
Samsung Electronic |
| 49 |
K4S561632B-TC/L1L |
256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL |
Samsung Electronic |
| 50 |
K4S561632B-TC/L75 |
256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL |
Samsung Electronic |
| 51 |
MAX6319LHUK32B-T |
Microprocessor supervisory circuit with manual reset (manual reset input, reset outputs active-low,push/pull and active-high, push/pull).Factory-trimmed reset threshold(typ) 3.200V, reset timeout(min) 20ms |
MAXIM - Dallas Semiconductor |
| 52 |
MAX6319MHUK32B-T |
Microprocessor supervisory circuit with manual reset (manual reset input, reset outputs active-high, push/pull and active-low, bidirectional).Factory-trimmed reset threshold(typ) 3.200V, reset timeout(min) 20ms |
MAXIM - Dallas Semiconductor |
| 53 |
MAX6322HPUK32B-T |
Microprocessor supervisory circuit with manual reset (manual reset input, reset outputs active-high, push/pull and active-low, open-drain).Factory-trimmed reset threshold(typ) 3.200V, reset timeout(min) 20ms |
MAXIM - Dallas Semiconductor |
| 54 |
R1112N32B-TL |
Low noise 150mA LDO regulator. Output voltage 3.2V. Active high type. Taping type TL |
Ricoh |
| 55 |
R1112N32B-TR |
Low noise 150mA LDO regulator. Output voltage 3.2V. Active high type. Standard taping type TR |
Ricoh |
| 56 |
R1223N232B-TL |
PWM/VFM step-down DC/DC converter with low supply current by CMOS. Output voltage 2.3V. Oscillator frequency 500kHz. Taping specification TL |
Ricoh |
| 57 |
R1223N232B-TR |
PWM/VFM step-down DC/DC converter with low supply current by CMOS. Output voltage 2.3V. Oscillator frequency 500kHz. Standard taping specification TR |
Ricoh |
| 58 |
R1223N332B-TL |
PWM/VFM step-down DC/DC converter with low supply current by CMOS. Output voltage 3.3V. Oscillator frequency 500kHz. Taping specification TL |
Ricoh |
| 59 |
R1223N332B-TR |
PWM/VFM step-down DC/DC converter with low supply current by CMOS. Output voltage 3.3V. Oscillator frequency 500kHz. Standard taping specification TR |
Ricoh |
| 60 |
R1223N432B-TL |
PWM/VFM step-down DC/DC converter with low supply current by CMOS. Output voltage 4.3V. Oscillator frequency 500kHz. Taping specification TL |
Ricoh |
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