No. |
Part Name |
Description |
Manufacturer |
31 |
K4S560432D-TL7C |
16M x 4bit x 4 Banks Synchronous DRAM LVTTL |
Samsung Electronic |
32 |
K4S560832D-TC/L1H |
256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL |
Samsung Electronic |
33 |
K4S560832D-TC/L1L |
256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL |
Samsung Electronic |
34 |
K4S560832D-TC/L75 |
256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL |
Samsung Electronic |
35 |
K4S560832D-TC/L7C |
256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL |
Samsung Electronic |
36 |
K4S561632D-TC/L1H |
256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL |
Samsung Electronic |
37 |
K4S561632D-TC/L1L |
256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL |
Samsung Electronic |
38 |
K4S561632D-TC/L60 |
256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL |
Samsung Electronic |
39 |
K4S561632D-TC/L75 |
256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL |
Samsung Electronic |
40 |
K4S561632D-TC/L7C |
256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL |
Samsung Electronic |
41 |
K4S640432D-TC/L10 |
64Mbit SDRAM 4M x 4Bit x 4 Banks Synchronous DRAM LVTTL |
Samsung Electronic |
42 |
K4S640432D-TC/L1H |
64Mbit SDRAM 4M x 4Bit x 4 Banks Synchronous DRAM LVTTL |
Samsung Electronic |
43 |
K4S640432D-TC/L1L |
64Mbit SDRAM 4M x 4Bit x 4 Banks Synchronous DRAM LVTTL |
Samsung Electronic |
44 |
K4S640432D-TC/L75 |
64Mbit SDRAM 4M x 4Bit x 4 Banks Synchronous DRAM LVTTL |
Samsung Electronic |
45 |
K4S640432D-TC/L80 |
64Mbit SDRAM 4M x 4Bit x 4 Banks Synchronous DRAM LVTTL |
Samsung Electronic |
46 |
K4S640832D-TC/L10 |
64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL |
Samsung Electronic |
47 |
K4S640832D-TC/L1H |
64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL |
Samsung Electronic |
48 |
K4S640832D-TC/L1L |
64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL |
Samsung Electronic |
49 |
K4S640832D-TC/L75 |
64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL |
Samsung Electronic |
50 |
K4S640832D-TC/L80 |
64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL |
Samsung Electronic |
51 |
K4S641632D-TC/L1H |
64Mbit SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM LVTTL |
Samsung Electronic |
52 |
K4S641632D-TC/L1L |
64Mbit SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM LVTTL |
Samsung Electronic |
53 |
K4S641632D-TC/L55 |
64Mbit SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM LVTTL |
Samsung Electronic |
54 |
K4S641632D-TC/L60 |
64Mbit SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM LVTTL |
Samsung Electronic |
55 |
K4S641632D-TC/L70 |
64Mbit SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM LVTTL |
Samsung Electronic |
56 |
K4S641632D-TC/L75 |
64Mbit SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM LVTTL |
Samsung Electronic |
57 |
K4S641632D-TC/L80 |
64Mbit SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM LVTTL |
Samsung Electronic |
58 |
MAX6319LHUK32D-T |
Microprocessor supervisory circuit with manual reset (manual reset input, reset outputs active-low,push/pull and active-high, push/pull).Factory-trimmed reset threshold(typ) 3.200V, reset timeout(min) 1120ms |
MAXIM - Dallas Semiconductor |
59 |
MAX6319MHUK32D-T |
Microprocessor supervisory circuit with manual reset (manual reset input, reset outputs active-high, push/pull and active-low, bidirectional).Factory-trimmed reset threshold(typ) 3.200V, reset timeout(min) 1120ms |
MAXIM - Dallas Semiconductor |
60 |
MAX6322HPUK32D-T |
Microprocessor supervisory circuit with manual reset (manual reset input, reset outputs active-high, push/pull and active-low, open-drain).Factory-trimmed reset threshold(typ) 3.200V, reset timeout(min) 1120ms |
MAXIM - Dallas Semiconductor |
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