No. |
Part Name |
Description |
Manufacturer |
31 |
ISD33240ED |
240 seconds single chip voice record/playback device |
Information Storage Devices |
32 |
ISD33240EI |
240 seconds single chip voice record/playback device |
Information Storage Devices |
33 |
ISD33240P |
240 seconds single chip voice record/playback device |
Information Storage Devices |
34 |
ISD33240S |
240 seconds single chip voice record/playback device |
Information Storage Devices |
35 |
ISD33240X |
240 seconds single chip voice record/playback device |
Information Storage Devices |
36 |
JAN1N3324B |
Zener Voltage Regulator Diode |
Microsemi |
37 |
JAN1N3324RB |
Zener Voltage Regulator Diode |
Microsemi |
38 |
JANTX1N3324B |
Zener Voltage Regulator Diode |
Microsemi |
39 |
JANTX1N3324RB |
Zener Voltage Regulator Diode |
Microsemi |
40 |
JANTXV1N3324B |
Zener Voltage Regulator Diode |
Microsemi |
41 |
JANTXV1N3324RB |
Zener Voltage Regulator Diode |
Microsemi |
42 |
LC863324 |
8-Bit Single Chip Microcontroller |
SANYO |
43 |
LC863324A |
8-Bit Single Chip Microcontroller |
SANYO |
44 |
M368L3324CUS-CLCC |
DDR SDRAM Unbuffered Module |
Samsung Electronic |
45 |
M470L3324BT |
DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb B-die |
Samsung Electronic |
46 |
M470L3324BT0-CA2 |
DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb B-die |
Samsung Electronic |
47 |
M470L3324BT0-CB0 |
DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb B-die |
Samsung Electronic |
48 |
M470L3324BT0-CB3 |
DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb B-die |
Samsung Electronic |
49 |
M470L3324BT0-CCC |
DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb B-die |
Samsung Electronic |
50 |
M470L3324BT0-CLA2 |
DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb B-die |
Samsung Electronic |
51 |
M470L3324BT0-CLA2 |
DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb B-die |
Samsung Electronic |
52 |
M470L3324BT0-CLB0 |
DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb B-die |
Samsung Electronic |
53 |
M470L3324BT0-CLB3 |
DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb B-die |
Samsung Electronic |
54 |
M470L3324BT0-CLCC |
DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb B-die |
Samsung Electronic |
55 |
M470L3324BTU0-CA2 |
DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb B-die |
Samsung Electronic |
56 |
M470L3324BTU0-CB0 |
DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb B-die |
Samsung Electronic |
57 |
M470L3324BTU0-CB3 |
DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb B-die |
Samsung Electronic |
58 |
M470L3324BTU0-CCC |
DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb B-die |
Samsung Electronic |
59 |
M470L3324BTU0-CLA2 |
DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb B-die |
Samsung Electronic |
60 |
M470L3324BTU0-CLB0 |
DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb B-die |
Samsung Electronic |
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