| No. |
Part Name |
Description |
Manufacturer |
| 31 |
2N650 |
Trans GP BJT NPN 350V 0.5A 3-Pin TO-92 |
New Jersey Semiconductor |
| 32 |
2N6513 |
Trans GP BJT NPN 350V 7A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 33 |
2N6517 |
0.625W General Purpose NPN Plastic Leaded Transistor. 350V Vceo, 0.500A Ic, 20 - hFE |
Continental Device India Limited |
| 34 |
2N6517 |
High voltage transistor. Collector-emitter voltage: Vceo = 350V. Collector-base voltage: Vcbo = 350V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 35 |
2N6517 |
High voltage transistor. Collector-emitter voltage: Vceo = 350V. Collector-base voltage: Vcbo = 350V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 36 |
2N6520 |
0.625W General Purpose PNP Plastic Leaded Transistor. 350V Vceo, 0.500A Ic, 20 - hFE |
Continental Device India Limited |
| 37 |
2N6520 |
High voltage transistor. Collector-emitter voltage: Vceo = -350V. Collector-base voltage: Vcbo = -350V. Collector dissipation: Pc(max) = 0.625W. |
USHA India LTD |
| 38 |
2N6520 |
High voltage transistor. Collector-emitter voltage: Vceo = -350V. Collector-base voltage: Vcbo = -350V. Collector dissipation: Pc(max) = 0.625W. |
USHA India LTD |
| 39 |
2N653 |
Trans GP BJT NPN 350V 0.5A 3-Pin TO-92 |
New Jersey Semiconductor |
| 40 |
2N654 |
Trans GP BJT NPN 350V 0.5A 3-Pin TO-92 |
New Jersey Semiconductor |
| 41 |
2N655 |
Trans GP BJT NPN 350V 0.5A 3-Pin TO-92 |
New Jersey Semiconductor |
| 42 |
2N6559 |
Trans GP BJT NPN 350V 0.5A 3-Pin(3+Tab) TO-202 |
New Jersey Semiconductor |
| 43 |
2N6579 |
Trans GP BJT NPN 350V 12A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 44 |
2N658 |
Trans GP BJT NPN 350V 0.5A 3-Pin TO-92 |
New Jersey Semiconductor |
| 45 |
2N659 |
Trans GP BJT NPN 350V 0.5A 3-Pin TO-92 |
New Jersey Semiconductor |
| 46 |
2N6654 |
Trans GP BJT NPN 350V 20A |
New Jersey Semiconductor |
| 47 |
2N6677 |
Trans GP BJT NPN 350V 15A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 48 |
2N6739 |
Trans GP BJT NPN 350V 10A 3-Pin(3+Tab) TO-220 |
New Jersey Semiconductor |
| 49 |
2N6759 |
N-Channel Power MOSFETs/ 5.5A/ 350V/400V |
Fairchild Semiconductor |
| 50 |
2N6759 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 4.5A. |
General Electric Solid State |
| 51 |
2N6760 |
N-Channel Power MOSFETs/ 5.5A/ 350V/400V |
Fairchild Semiconductor |
| 52 |
2N6767 |
N-Channel Power MOSFETs/ 15A/ 350V/400V |
Fairchild Semiconductor |
| 53 |
2N6768 |
N-Channel Power MOSFETs/ 15A/ 350V/400V |
Fairchild Semiconductor |
| 54 |
2N686 |
25A silicon controlled rectifier. Vrsom 350V. |
General Electric Solid State |
| 55 |
2SD1313 |
POWER TRANSISTORS(25A,350V,200W) |
MOSPEC Semiconductor |
| 56 |
30KP350A |
Diode TVS Single Uni-Dir 350V 30KW 2-Pin Case 5A |
New Jersey Semiconductor |
| 57 |
30KP350CA |
Diode TVS Single Bi-Dir 350V 30KW 2-Pin Case 5A |
New Jersey Semiconductor |
| 58 |
30KPA350 |
Diode TVS Single Uni-Dir 350V 30KW 2-Pin Case P-600 |
New Jersey Semiconductor |
| 59 |
30KPA350A |
Diode TVS Single Uni-Dir 350V 30KW 2-Pin Case P-600 |
New Jersey Semiconductor |
| 60 |
30KPA350C |
Diode TVS Single Uni-Dir 350V 30KW 2-Pin Case P-600 |
New Jersey Semiconductor |
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