| No. |
Part Name |
Description |
Manufacturer |
| 31 |
CD5357B |
ZENER DIODE CHIPS |
Compensated Devices Incorporated |
| 32 |
CMZ5357B |
HIGH POWER ZENER DIODE 6.8 VOLTS THRU 200 VOLTS 5.0W, 5% TOLERANCE |
Central Semiconductor |
| 33 |
CY7C1357B |
256Kx36/512Kx18 Flow-Through SRAMwith NoBL™ Architecture |
Cypress |
| 34 |
CY7C1357B-100AC |
9-Mb (256K x 36/512K x 18) Flow-Through SRAM with NoBL(TM) Architecture |
Cypress |
| 35 |
CY7C1357B-100AI |
9-Mb (256K x 36/512K x 18) Flow-Through SRAM with NoBL Architecture |
Cypress |
| 36 |
CY7C1357B-100BGC |
9-Mb (256K x 36/512K x 18) Flow-Through SRAM with NoBL Architecture |
Cypress |
| 37 |
CY7C1357B-100BGI |
9-Mb (256K x 36/512K x 18) Flow-Through SRAM with NoBL Architecture |
Cypress |
| 38 |
CY7C1357B-100BZC |
9-Mb (256K x 36/512K x 18) Flow-Through SRAM with NoBL(TM) Architecture |
Cypress |
| 39 |
CY7C1357B-117AC |
9-Mb (256K x 36/512K x 18) Flow-Through SRAM with NoBL Architecture |
Cypress |
| 40 |
CY7C1357B-117AI |
9-Mb (256K x 36/512K x 18) Flow-Through SRAM with NoBL(TM) Architecture |
Cypress |
| 41 |
CY7C1357B-117BGC |
9-Mb (256K x 36/512K x 18) Flow-Through SRAM with NoBL Architecture |
Cypress |
| 42 |
CY7C1357B-117BGI |
9-Mb (256K x 36/512K x 18) Flow-Through SRAM with NoBL Architecture |
Cypress |
| 43 |
CY7C1357B-117BZC |
9-Mb (256K x 36/512K x 18) Flow-Through SRAM with NoBL Architecture |
Cypress |
| 44 |
CY7C1357B-117BZI |
9-Mb (256K x 36/512K x 18) Flow-Through SRAM with NoBL Architecture |
Cypress |
| 45 |
CY7C1357B-133AC |
9-Mb (256K x 36/512K x 18) Flow-Through SRAM with NoBL(TM) Architecture |
Cypress |
| 46 |
CY7C1357B-133AI |
9-Mb (256K x 36/512K x 18) Flow-Through SRAM with NoBL Architecture |
Cypress |
| 47 |
CY7C1357B-133BGC |
9-Mb (256K x 36/512K x 18) Flow-Through SRAM with NoBL Architecture |
Cypress |
| 48 |
CY7C1357B-133BGI |
9-Mb (256K x 36/512K x 18) Flow-Through SRAM with NoBL Architecture |
Cypress |
| 49 |
CY7C1357B-133BZC |
9-Mb (256K x 36/512K x 18) Flow-Through SRAM with NoBL Architecture |
Cypress |
| 50 |
CY7C1357B-133BZI |
9-Mb (256K x 36/512K x 18) Flow-Through SRAM with NoBL Architecture |
Cypress |
| 51 |
CZ5357B |
Leaded Zener Diode General Purpose |
Central Semiconductor |
| 52 |
CZRC5357B |
5.0 watt surface mount zener diode. Nom zener voltage 20 V. Tolerance +-5 %. |
Comchip Technology |
| 53 |
CZRC5357B-G |
Zener Diodes, PD=5Watts, VZ=20V |
Comchip Technology |
| 54 |
ICY7C1357B-100BGI |
9-Mb (256K x 36/512K x 18) Flow-Through SRAM with NoBL Architecture |
Cypress |
| 55 |
LF357BH |
+/-18 V, monolithic JEET input operational amplifier |
National Semiconductor |
| 56 |
LF357BJ |
+/-18 V, monolithic JEET input operational amplifier |
National Semiconductor |
| 57 |
LF357BM |
+/-18 V, monolithic JEET input operational amplifier |
National Semiconductor |
| 58 |
LF357BN |
Series Monolithic JFET Input Operational Amplifiers |
National Semiconductor |
| 59 |
MAX98357B |
PCM Input Class D Audio Power Amplifiers |
MAXIM - Dallas Semiconductor |
| 60 |
MAX98357BETE+ |
PCM Input Class D Audio Power Amplifiers |
MAXIM - Dallas Semiconductor |
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