No. |
Part Name |
Description |
Manufacturer |
31 |
ISPLSI2128VL-135LT176 |
2.5V In-System Programmable SuperFAST High Density PLD |
Lattice Semiconductor |
32 |
ISPLSI2128VL-135LT176I |
2.5V In-System Programmable SuperFAST High Density PLD |
Lattice Semiconductor |
33 |
ISPLSI2192VE-135LT128 |
3.3V In-System Programmable SuperFAST�� High Density PLD |
Lattice Semiconductor |
34 |
ISPLSI2192VL-135LT128 |
2.5V In-System Programmable SuperFAST High Density PLD |
Lattice Semiconductor |
35 |
LM2335LTM |
PLLatinum Low Power Dual Frequency Synthesizer for RF Personal Communications |
National Semiconductor |
36 |
LMX2335LTM |
PLLatinum Low Power Dual Frequency Synthesizer for RF Personal Communications |
National Semiconductor |
37 |
LMX2335LTMX |
PLLatinum Low Power Dual Frequency Synthesizer for RF Personal Communications |
National Semiconductor |
38 |
MBRD835LT4 |
8A 35V Schottky Rectifier |
ON Semiconductor |
39 |
MMBD2835LT1 |
Monolithic Dual Switching Diodes |
Leshan Radio Company |
40 |
MMBD2835LT1 |
Monolithic Dual Switching Diodes |
Motorola |
41 |
MMBD2835LT1 |
Small Signal DL Diode |
ON Semiconductor |
42 |
MMBD2835LT1-D |
Monolithic Dual Switching Diodes |
ON Semiconductor |
43 |
MMBD2835LT3 |
Monolithic Dual Switching Diode |
ON Semiconductor |
44 |
MMUN2235LT1 |
Bias Resistor Transistor |
Leshan Radio Company |
45 |
MMUN2235LT1 |
Bias Resistor Transistor |
ON Semiconductor |
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