| No. |
Part Name |
Description |
Manufacturer |
| 31 |
DCX144EU-7 |
COMPLEMENTARY NPN/PNP PRE-BIASED SMALL SIGNAL SOT-363 DUAL SURFACE MOUNT TRANSISTOR |
Diodes |
| 32 |
DDA114EU-7 |
NPN PRE-BIASED SMALL SIGNAL SOT-363 DUAL SURFACE MOUNT TRANSISTOR |
Diodes |
| 33 |
DDA114TU-7 |
NPN PRE-BIASED SMALL SIGNAL SOT-363 DUAL SURFACE MOUNT TRANSISTOR |
Diodes |
| 34 |
DDA114YU-7 |
NPN PRE-BIASED SMALL SIGNAL SOT-363 DUAL SURFACE MOUNT TRANSISTOR |
Diodes |
| 35 |
DDA123JU-7 |
NPN PRE-BIASED SMALL SIGNAL SOT-363 DUAL SURFACE MOUNT TRANSISTOR |
Diodes |
| 36 |
DDA124EU-7 |
NPN PRE-BIASED SMALL SIGNAL SOT-363 DUAL SURFACE MOUNT TRANSISTOR |
Diodes |
| 37 |
DDA143TU-7 |
NPN PRE-BIASED SMALL SIGNAL SOT-363 DUAL SURFACE MOUNT TRANSISTOR |
Diodes |
| 38 |
DDA144EU-7 |
NPN PRE-BIASED SMALL SIGNAL SOT-363 DUAL SURFACE MOUNT TRANSISTOR |
Diodes |
| 39 |
DMMT3904 |
SOT-363 Plastic-Encapsulate Biploar Transistors |
Micro Commercial Components |
| 40 |
DMMT3906 |
SOT-363 Plastic-Encapsulate Biploar Transistors |
Micro Commercial Components |
| 41 |
LM363H-10 |
LM363 Precision Instrumentation Amplifier |
National Semiconductor |
| 42 |
LM363H-100 |
LM363 Precision Instrumentation Amplifier |
National Semiconductor |
| 43 |
LM363H-500 |
LM363 Precision Instrumentation Amplifier |
National Semiconductor |
| 44 |
MMDT2222A |
SOT-363 Plastic-Encapsulate Biploar Transistors |
Micro Commercial Components |
| 45 |
MMDT2227 |
SOT-363 Plastic-Encapsulate Biploar Transistors |
Micro Commercial Components |
| 46 |
MMDT2907A |
SOT-363 Plastic-Encapsulate Biploar Transistors |
Micro Commercial Components |
| 47 |
MMDT3904 |
SOT-363 Plastic-Encapsulate Biploar Transistors |
Micro Commercial Components |
| 48 |
MMDT3906 |
SOT-363 Plastic-Encapsulate Biploar Transistors |
Micro Commercial Components |
| 49 |
MMDT3946 |
SOT-363 Plastic-Encapsulate Biploar Transistors |
Micro Commercial Components |
| 50 |
MMDT4401 |
SOT-363 Plastic-Encapsulate Biploar Transistors |
Micro Commercial Components |
| 51 |
MMDT4403 |
SOT-363 Plastic-Encapsulate Biploar Transistors |
Micro Commercial Components |
| 52 |
MMDT4413 |
SOT-363 Plastic-Encapsulate Biploar Transistors |
Micro Commercial Components |
| 53 |
MMDT5401 |
SOT-363 Plastic-Encapsulate Biploar Transistors |
Micro Commercial Components |
| 54 |
MMDT5451 |
SOT-363 Plastic-Encapsulate Biploar Transistors |
Micro Commercial Components |
| 55 |
MMDT5551 |
SOT-363 Plastic-Encapsulate Biploar Transistors |
Micro Commercial Components |
| 56 |
NSS12200WT1G |
Low VCE(sat) Transistor, PNP, 12 V, 2.0 A, SOT-363 Package |
ON Semiconductor |
| 57 |
NX8560SJ573-BC |
EA modulator and wavelength monitor integrated 1550 nm MQW-DFB laser diode module for 10 Gb/s applications. ITU-T wavelength 1557.363 nm. Frequency 192.50 THz. FC-UPC connector. |
NEC |
| 58 |
NX8560SJ573-CC |
EA modulator and wavelength monitor integrated 1550 nm MQW-DFB laser diode module for 10 Gb/s applications. ITU-T wavelength 1557.363 nm. Frequency 192.50 THz. SC-UPC connector. |
NEC |
| 59 |
NX8567SA573-CC |
EA modulator and wavelength monitor integrated InGaAsP MQW DFB laser diode module for 2.5 Gb/s ultralong-reach 600 km DWDM applications. ITU-T wavelength 1557.363 nm. Frequency 192.50 THz. SC-UPC connector. |
NEC |
| 60 |
NX8567SAM573-BC |
EA modulator and wavelength monitor integrated InGaAsP MQW DFB laser diode module for 2.5 Gb/s ultralong-reach 360 km DWDM applications. ITU-T wavelength 1557.363 nm. Frequency 192.50 THz. FC-UPC connector. |
NEC |
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