| No. |
Part Name |
Description |
Manufacturer |
| 31 |
ERJB3BJ7R5V |
High Power Current Sensing Chip Resistors, Wide Terminal Type |
Panasonic |
| 32 |
ERJB3BJ8R2V |
High Power Current Sensing Chip Resistors, Wide Terminal Type |
Panasonic |
| 33 |
ERJB3BJ9R1V |
High Power Current Sensing Chip Resistors, Wide Terminal Type |
Panasonic |
| 34 |
ERJB3BJR22V |
High Power Current Sensing Chip Resistors, Wide Terminal Type |
Panasonic |
| 35 |
ERJB3BJR24V |
High Power Current Sensing Chip Resistors, Wide Terminal Type |
Panasonic |
| 36 |
ERJB3BJR27V |
High Power Current Sensing Chip Resistors, Wide Terminal Type |
Panasonic |
| 37 |
ERJB3BJR30V |
High Power Current Sensing Chip Resistors, Wide Terminal Type |
Panasonic |
| 38 |
ERJB3BJR33V |
High Power Current Sensing Chip Resistors, Wide Terminal Type |
Panasonic |
| 39 |
ERJB3BJR36V |
High Power Current Sensing Chip Resistors, Wide Terminal Type |
Panasonic |
| 40 |
ERJB3BJR39V |
High Power Current Sensing Chip Resistors, Wide Terminal Type |
Panasonic |
| 41 |
ERJB3BJR43V |
High Power Current Sensing Chip Resistors, Wide Terminal Type |
Panasonic |
| 42 |
ERJB3BJR47V |
High Power Current Sensing Chip Resistors, Wide Terminal Type |
Panasonic |
| 43 |
ERJB3BJR51V |
High Power Current Sensing Chip Resistors, Wide Terminal Type |
Panasonic |
| 44 |
ERJB3BJR56V |
High Power Current Sensing Chip Resistors, Wide Terminal Type |
Panasonic |
| 45 |
ERJB3BJR62V |
High Power Current Sensing Chip Resistors, Wide Terminal Type |
Panasonic |
| 46 |
ERJB3BJR68V |
High Power Current Sensing Chip Resistors, Wide Terminal Type |
Panasonic |
| 47 |
ERJB3BJR75V |
High Power Current Sensing Chip Resistors, Wide Terminal Type |
Panasonic |
| 48 |
ERJB3BJR82V |
High Power Current Sensing Chip Resistors, Wide Terminal Type |
Panasonic |
| 49 |
ERJB3BJR91V |
High Power Current Sensing Chip Resistors, Wide Terminal Type |
Panasonic |
| 50 |
HM538123BJ-10 |
100ns; V(cc): -0.5 to +7.0V; 1M VRAM (128 -kword x 8-bit) |
Hitachi Semiconductor |
| 51 |
HM538123BJ-6 |
60ns; V(cc): -0.5 to +7.0V; 1M VRAM (128 -kword x 8-bit) |
Hitachi Semiconductor |
| 52 |
HM538123BJ-7 |
70ns; V(cc): -0.5 to +7.0V; 1M VRAM (128 -kword x 8-bit) |
Hitachi Semiconductor |
| 53 |
HM538123BJ-8 |
80ns; V(cc): -0.5 to +7.0V; 1M VRAM (128 -kword x 8-bit) |
Hitachi Semiconductor |
| 54 |
MMDJ3N03BJT |
DUAL BIPOLAR POWER TRANSISTOR NPN SILICON 30 VOLTS 3 AMPERES |
Motorola |
| 55 |
MMDJ3N03BJT |
Plastic Power Transistors |
ON Semiconductor |
| 56 |
MMDJ3N03BJT-D |
Plastic Power Transistors SO-8 for Surface Mount Applications |
ON Semiconductor |
| 57 |
MMDJ3N03BJTR2 |
Plastic Power Transistors |
ON Semiconductor |
| 58 |
MMDJ3P03BJT |
DUAL BIPOLAR POWER TRANSISTOR PNP SILICON 30 VOLTS 3 AMPERES |
Motorola |
| 59 |
MMDJ3P03BJT |
Dual PNP Bipolar Power Transistor, SO-8 |
ON Semiconductor |
| 60 |
MMDJ3P03BJT-D |
Plastic Power Transistors SO-8 for Surface Mount Applications |
ON Semiconductor |
| | | |
