No. |
Part Name |
Description |
Manufacturer |
31 |
ERJB3CJR051V |
High Power Current Sensing Chip Resistors, Wide Terminal Type |
Panasonic |
32 |
ERJB3CJR056V |
High Power Current Sensing Chip Resistors, Wide Terminal Type |
Panasonic |
33 |
ERJB3CJR062V |
High Power Current Sensing Chip Resistors, Wide Terminal Type |
Panasonic |
34 |
ERJB3CJR068V |
High Power Current Sensing Chip Resistors, Wide Terminal Type |
Panasonic |
35 |
ERJB3CJR075V |
High Power Current Sensing Chip Resistors, Wide Terminal Type |
Panasonic |
36 |
ERJB3CJR082V |
High Power Current Sensing Chip Resistors, Wide Terminal Type |
Panasonic |
37 |
ERJB3CJR091V |
High Power Current Sensing Chip Resistors, Wide Terminal Type |
Panasonic |
38 |
ERJB3CJR10V |
High Power Current Sensing Chip Resistors, Wide Terminal Type |
Panasonic |
39 |
ERJB3CJR11V |
High Power Current Sensing Chip Resistors, Wide Terminal Type |
Panasonic |
40 |
ERJB3CJR12V |
High Power Current Sensing Chip Resistors, Wide Terminal Type |
Panasonic |
41 |
ERJB3CJR13V |
High Power Current Sensing Chip Resistors, Wide Terminal Type |
Panasonic |
42 |
ERJB3CJR15V |
High Power Current Sensing Chip Resistors, Wide Terminal Type |
Panasonic |
43 |
ERJB3CJR16V |
High Power Current Sensing Chip Resistors, Wide Terminal Type |
Panasonic |
44 |
ERJB3CJR18V |
High Power Current Sensing Chip Resistors, Wide Terminal Type |
Panasonic |
45 |
ERJB3CJR20V |
High Power Current Sensing Chip Resistors, Wide Terminal Type |
Panasonic |
46 |
GM71C17403CJ-5 |
CMOS DRAM 4,194,304 words x 4 bit, 5.0V, 50ns |
Hynix Semiconductor |
47 |
GM71C17403CJ-6 |
CMOS DRAM 4,194,304 words x 4 bit, 5.0V, 60ns |
Hynix Semiconductor |
48 |
GM71C17403CJ-7 |
CMOS DRAM 4,194,304 words x 4 bit, 5.0V, 70ns |
Hynix Semiconductor |
49 |
GM71C18163CJ-5 |
1,048,576 words x 16 bit CMOS DRAM, 50ns |
Hynix Semiconductor |
50 |
GM71C18163CJ-6 |
1,048,576 words x 16 bit CMOS DRAM, 60ns |
Hynix Semiconductor |
51 |
GM71C18163CJ-7 |
1,048,576 words x 16 bit CMOS DRAM, 70ns |
Hynix Semiconductor |
52 |
GM71CS17403CJ-5 |
CMOS DRAM 4,194,304 words x 4 bit, 5.0V, 50ns |
Hynix Semiconductor |
53 |
GM71CS17403CJ-6 |
CMOS DRAM 4,194,304 words x 4 bit, 5.0V, 60ns |
Hynix Semiconductor |
54 |
GM71CS17403CJ-7 |
CMOS DRAM 4,194,304 words x 4 bit, 5.0V, 70ns |
Hynix Semiconductor |
55 |
GM71V17403CJ-5 |
CMOS DRAM 4,194,304 words x 4 bit, 3.3V, 50ns |
Hynix Semiconductor |
56 |
GM71V17403CJ-6 |
CMOS DRAM 4,194,304 words x 4 bit, 3.3V, 60ns |
Hynix Semiconductor |
57 |
GM71V17403CJ-7 |
CMOS DRAM 4,194,304 words x 4 bit, 3.3V, 70ns |
Hynix Semiconductor |
58 |
GM71V18163CJ-5 |
1M words x 16 bit CMOS dynamic RAM, 3.3V, 50ns |
Hynix Semiconductor |
59 |
GM71V18163CJ-6 |
1M words x 16 bit CMOS dynamic RAM, 3.3V, 60ns |
Hynix Semiconductor |
60 |
GM71V18163CJ-7 |
1M words x 16 bit CMOS dynamic RAM, 3.3V, 70ns |
Hynix Semiconductor |
| | | |