No. |
Part Name |
Description |
Manufacturer |
31 |
5962R9475408QXA |
Radiation Hardened PAL: SMD. Total dose 1E5 rads(Si). 15.5ns propagation delay, TTL I/O. Class Q. Lead finish solder. |
Aeroflex Circuit Technology |
32 |
5962R9475408QXC |
Radiation Hardened PAL: SMD. Total dose 1E5 rads(Si). 15.5ns propagation delay, TTL I/O. Class Q. Lead finish gold. |
Aeroflex Circuit Technology |
33 |
5962R9475408QXX |
Radiation Hardened PAL: SMD. Total dose 1E5 rads(Si). 15.5ns propagation delay, TTL I/O. Class Q. Lead finish optional. |
Aeroflex Circuit Technology |
34 |
5962R9475408QYA |
Radiation Hardened PAL: SMD. Total dose 1E5 rads(Si). 15.5ns propagation delay, TTL I/O. Class Q. Lead finish solder. |
Aeroflex Circuit Technology |
35 |
5962R9475408QYC |
Radiation Hardened PAL: SMD. Total dose 1E5 rads(Si). 15.5ns propagation delay, TTL I/O. Class Q. Lead finish gold. |
Aeroflex Circuit Technology |
36 |
5962R9475408QYX |
Radiation Hardened PAL: SMD. Total dose 1E5 rads(Si). 15.5ns propagation delay, TTL I/O. Class Q. Lead finish optional. |
Aeroflex Circuit Technology |
37 |
CSD16408Q5 |
N-Channel NexFET� Power MOSFET |
Texas Instruments |
38 |
CSD16408Q5C |
DualCool? N-Channel NexFET? Power MOSFET 8-VSON-CLIP -55 to 150 |
Texas Instruments |
39 |
K9F6408Q(U)0C |
8M x 8 Bit NAND Flash Memory Data Sheet |
Samsung Electronic |
40 |
K9F6408Q0C |
8M x 8 Bit Bit NAND Flash Memory |
Samsung Electronic |
41 |
K9F6408Q0C-B |
8M x 8 Bit Bit NAND Flash Memory |
Samsung Electronic |
42 |
K9F6408Q0C-H |
8M x 8 Bit Bit NAND Flash Memory |
Samsung Electronic |
43 |
THS1408QPHP |
14-Bit, 8 MSPS ADC Single Ch., Diff. Input, DSP/uP IF, Pgmable Gain Amp, Internal S&H |
Texas Instruments |
44 |
THS1408QPHP |
14-Bit, 8 MSPS ADC Single Ch., Diff. Input, DSP/uP IF, Pgmable Gain Amp, Internal S&H |
Texas Instruments |
| | | |