Datasheets for 40E1

Datasheets found :: 53 Page: | 1 | 2 |

No.	Part Name	Description	Manufacturer
31	GS840E18T-150I	150MHz 10ns 256K x 18 4Mb sync burst SRAM	GSI Technology
32	GS840E18T-166	166MHz 8.5ns 256K x 18 4Mb sync burst SRAM	GSI Technology
33	GS840E18T-166I	166MHz 8.5ns 256K x 18 4Mb sync burst SRAM	GSI Technology
34	GS840E18T-180	180MHz 8ns 256K x 18 4Mb sync burst SRAM	GSI Technology
35	GS840E18T-180I	180MHz 8ns 256K x 18 4Mb sync burst SRAM	GSI Technology
36	HGTD6N40E1	6A/ 400V and 500V N-Channel IGBTs	Intersil
37	HGTD6N40E1S	6A/ 400V and 500V N-Channel IGBTs	Intersil
38	HGTH12N40E1	10A/ 12A/ 400V and 500V N-Channel IGBTs	Intersil
39	HGTH20N40E1	15A/ 20A/ 400V and 500V N-Channel IGBTs	Intersil
40	HGTH20N40E1D	20A/ 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes	Intersil
41	HGTP10N40E1	10A/ 12A/ 400V and 500V N-Channel IGBTs	Intersil
42	HGTP10N40E1D	10A/ 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes	Intersil
43	HGTP15N40E1	15A/ 20A/ 400V and 500V N-Channel IGBTs	Intersil
44	M30240E1	SINGLE-CHIP 16-BIT CMOS MICROCOMPUTER	Mitsubishi Electric Corporation
45	M30240E1-FP	Single chip 16-bit CMOS microcomputer	Mitsubishi Electric Corporation
46	M30240E1-XXXFP	SINGLE-CHIP 16-BIT CMOS MICROCOMPUTER	Mitsubishi Electric Corporation
47	M38B40E1H-XXXXFP	SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER	Mitsubishi Electric Corporation
48	MBM29DL640E12	FLASH MEMORY 64 M (8 M x 8/4 M x 16) BIT Dual Operation	Fujitsu Microelectronics
49	MBM29DL640E12PBT	64 M (8 M X 8/4 M X 16) BIT Dual Operation	Fujitsu Microelectronics
50	MBM29DL640E12TN	64 M (8 M X 8/4 M X 16) BIT Dual Operation	Fujitsu Microelectronics
51	MBM29DL640E12TR	64 M (8 M X 8/4 M X 16) BIT Dual Operation	Fujitsu Microelectronics
52	RE46C140E16F	Photoelectric Smoke Detector	Microchip
53	TK40E10N1	Power MOSFET (N-ch single 60V<VDSS≤150V)	TOSHIBA

Datasheets found :: 53 Page: | 1 | 2 |