| No. |
Part Name |
Description |
Manufacturer |
| 31 |
K4E660411D, K4E640411D |
16MB x 4bit CMOS Dynamic RAM with Extended Data Out Data Sheet |
Samsung Electronic |
| 32 |
K4E660411D, K4E640411D |
16MB x 4bit CMOS Dynamic RAM with Extended Data Out Data Sheet |
Samsung Electronic |
| 33 |
K4F160411D |
4M x 4Bit CMOS Dynamic RAM with Fast Page Mode |
Samsung Electronic |
| 34 |
K4F160411D-B |
4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 2K refresh cycle. |
Samsung Electronic |
| 35 |
K4F160411D-F |
4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 2K refresh cycle. |
Samsung Electronic |
| 36 |
K4F170411D |
4M x 4Bit CMOS Dynamic RAM with Fast Page Mode |
Samsung Electronic |
| 37 |
K4F170411D-B |
4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 4K refresh cycle. |
Samsung Electronic |
| 38 |
K4F170411D-F |
4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 4K refresh cycle. |
Samsung Electronic |
| 39 |
K4F660411D, K4F640411D |
16M x 4bit CMOS Dynamic RAM with Fast Page Mode Data Sheet |
Samsung Electronic |
| 40 |
K4F660411D, K4F640411D |
16M x 4bit CMOS Dynamic RAM with Fast Page Mode Data Sheet |
Samsung Electronic |
| 41 |
LF411D |
JFET-INPUT OPERATIONAL AMPLIFIER |
Texas Instruments |
| 42 |
MC1411D |
PERIPHERAL DRIVER ARRAYS |
Motorola |
| 43 |
NCP1411D |
Sync-Rect PFM Step-Up DC-DC Converter with Low-Battery Detector and Ring-Killer |
ON Semiconductor |
| 44 |
NCP1411DMR2 |
Sync-Rect PFM Step-Up DC-DC Converter with Low-Battery Detector and Ring-Killer |
ON Semiconductor |
| 45 |
NCP1411DMR2G |
Sync-Rect PFM Step-Up DC-DC Converter with Low-Battery Detector and Ring-Killer |
ON Semiconductor |
| 46 |
OM4411DT |
20Amp rating center-tap rectifier |
Omnirel |
| 47 |
R1210N411D-TL |
PWM step-up DC/DC converter. Output voltage 4.1V. Oscillator frequency 180kHz without a frequency change-over cicuit. Taping specification TL |
Ricoh |
| 48 |
R1210N411D-TR |
PWM step-up DC/DC converter. Output voltage 4.1V. Oscillator frequency 180kHz without a frequency change-over cicuit. Standard taping specification TR |
Ricoh |
| 49 |
RB411D |
0.5A, 20V ultra fast recovery rectifier |
MCC |
| 50 |
RB411D |
Diodes > Schottky Barrier Diodes > Surface mounting rectifier type |
ROHM |
| 51 |
RB411DFH |
Schottky Barrier Diode (corresponds to AEC-Q101) |
ROHM |
| 52 |
RB411DFHT146 |
Schottky Barrier Diode (corresponds to AEC-Q101) |
ROHM |
| 53 |
RB411DS |
SCHOTTKY BARRIER RECTIFIERS |
Micro Commercial Components |
| 54 |
RB411DT146 |
Schottky Barrier Diode |
ROHM |
| 55 |
SA2411DH |
+20 dBm single chip linear amplifier for WLAN |
Philips |
| 56 |
SI4411DY |
P-Channel 30-V (D-S) MOSFET |
Vishay |
| 57 |
SI6411DQ |
P-Channel 20-V (D-S) MOSFET |
Vishay |
| 58 |
SI7411DN |
P-Channel 20-V (D-S) MOSFET |
Vishay |
| 59 |
SI7411DN-T1-E3 |
P-Channel 20-V (D-S) MOSFET |
Vishay |
| 60 |
SI8411DB |
P-Channel 20-V (D-S) MOSFET |
Vishay |
| | | |
