| No. |
Part Name |
Description |
Manufacturer |
| 31 |
1PMT4123C/TR13 |
Zener Voltage Regulator Diode |
Microsemi |
| 32 |
1PMT4123C/TR7 |
Zener Voltage Regulator Diode |
Microsemi |
| 33 |
1PMT4123Ce3/TR13 |
Zener Voltage Regulator Diode |
Microsemi |
| 34 |
1PMT4123Ce3/TR7 |
Zener Voltage Regulator Diode |
Microsemi |
| 35 |
1PMT4123D/TR13 |
Zener Voltage Regulator Diode |
Microsemi |
| 36 |
1PMT4123D/TR7 |
Zener Voltage Regulator Diode |
Microsemi |
| 37 |
1PMT4123De3/TR13 |
Zener Voltage Regulator Diode |
Microsemi |
| 38 |
1PMT4123De3/TR7 |
Zener Voltage Regulator Diode |
Microsemi |
| 39 |
1PMT4123E3 |
Zener Voltage Regulator Diode |
Microsemi |
| 40 |
1PMT4123e3/TR13 |
Zener Voltage Regulator Diode |
Microsemi |
| 41 |
1PMT4123e3/TR7 |
Zener Voltage Regulator Diode |
Microsemi |
| 42 |
2N4123 |
General Purpose NPN Transistor |
CCSIT-CE |
| 43 |
2N4123 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
| 44 |
2N4123 |
NPN General Purpose Amplifier |
Fairchild Semiconductor |
| 45 |
2N4123 |
General purpose NPN transistor |
FERRANTI |
| 46 |
2N4123 |
Low Noise NPN Transistor |
FERRANTI |
| 47 |
2N4123 |
Switching NPN transistor |
FERRANTI |
| 48 |
2N4123 |
Planar epitaxial passivated NPN silicon transistor. 30V, 200mA. |
General Electric Solid State |
| 49 |
2N4123 |
General Purpose NPN silicon switching and amplifier transistor |
ITT Semiconductors |
| 50 |
2N4123 |
Ic=200mA, Vce=1.0V transistor |
MCC |
| 51 |
2N4123 |
NPN Silicon General Purpose Transistor 625mW |
Micro Commercial Components |
| 52 |
2N4123 |
NPN SILICON PLANAR EPITAXIAL TRANSISTOR |
Micro Electronics |
| 53 |
2N4123 |
NPN silicon transistor |
Motorola |
| 54 |
2N4123 |
Silicon NPN Transistor |
Motorola |
| 55 |
2N4123 |
NPN Transistor - General Purpose AMPS and Switches |
National Semiconductor |
| 56 |
2N4123 |
NPN Silicon Transistor |
NEC |
| 57 |
2N4123 |
General Purpose Transistors(NPN Silicon) |
ON Semiconductor |
| 58 |
2N4123 |
NPN EPITAXIAL SILICON TRANSISTOR |
Samsung Electronic |
| 59 |
2N4123 |
Silicon NPN epitaxial transistor (PCT Process) |
TOSHIBA |
| 60 |
2N4123 |
General purpose transistor. Collector-emitter voltage: Vceo = 30V. Collector-base voltage: Vcbo = 40V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| | | |
