No. |
Part Name |
Description |
Manufacturer |
31 |
K4E640412D |
16M x 4bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
32 |
K4E640412D-JC_L |
16M x 4 bit CMOS dynamic RAM with extended data out. 3.3V, 4K refresh cycle. |
Samsung Electronic |
33 |
K4E640412D-TC_L |
16M x 4 bit CMOS dynamic RAM with extended data out. 3.3V, 4K refresh cycle. |
Samsung Electronic |
34 |
K4E660412D |
16M x 4bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
35 |
K4E660412D, K4E640412D |
16MB x 4bit CMOS Dynamic RAM with Extended Data Out Data Sheet |
Samsung Electronic |
36 |
K4E660412D, K4E640412D |
16MB x 4bit CMOS Dynamic RAM with Extended Data Out Data Sheet |
Samsung Electronic |
37 |
K4E660412D, K4E640412D |
16MB x 4bit CMOS Dynamic RAM with Extended Data Out Data Sheet |
Samsung Electronic |
38 |
K4E660412D, K4E640412D |
16MB x 4bit CMOS Dynamic RAM with Extended Data Out Data Sheet |
Samsung Electronic |
39 |
K4E660412D-JC_L |
16M x 4 bit CMOS dynamic RAM with extended data out. 3.3V, 8K refresh cycle. |
Samsung Electronic |
40 |
K4E660412D-TC_L |
16M x 4 bit CMOS dynamic RAM with extended data out. 3.3V, 8K refresh cycle. |
Samsung Electronic |
41 |
K4F160412D |
4M x 4Bit CMOS Dynamic RAM with Fast Page Mode |
Samsung Electronic |
42 |
K4F160412D-B |
4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 2K refresh cycle. |
Samsung Electronic |
43 |
K4F160412D-F |
4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 2K refresh cycle. |
Samsung Electronic |
44 |
K4F170412D |
4M x 4Bit CMOS Dynamic RAM with Fast Page Mode |
Samsung Electronic |
45 |
K4F170412D-B |
4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 4K refresh cycle. |
Samsung Electronic |
46 |
K4F170412D-F |
4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 4K refresh cycle. |
Samsung Electronic |
47 |
K4F640412D |
16M x 4bit CMOS Dynamic RAM with Fast Page Mode |
Samsung Electronic |
48 |
K4F640412D-JC_L |
16M x 4 bit CMOS dynamic RAM with fast page mode. 3.3V, 4K refresh cycle. |
Samsung Electronic |
49 |
K4F640412D-TC_L |
16M x 4 bit CMOS dynamic RAM with fast page mode. 3.3V, 4K refresh cycle. |
Samsung Electronic |
50 |
K4F660412D |
16M x 4bit CMOS Dynamic RAM with Fast Page Mode |
Samsung Electronic |
51 |
K4F660412D, K4F640412D |
16M x 4bit CMOS Dynamic RAM with Fast Page Mode Data Sheet |
Samsung Electronic |
52 |
K4F660412D, K4F640412D |
16M x 4bit CMOS Dynamic RAM with Fast Page Mode Data Sheet |
Samsung Electronic |
53 |
K4F660412D, K4F640412D |
16M x 4bit CMOS Dynamic RAM with Fast Page Mode Data Sheet |
Samsung Electronic |
54 |
K4F660412D, K4F640412D |
16M x 4bit CMOS Dynamic RAM with Fast Page Mode Data Sheet |
Samsung Electronic |
55 |
K4F660412D-JC_L |
16M x 4 bit CMOS dynamic RAM with fast page mode. 3.3V, 8K refresh cycle. |
Samsung Electronic |
56 |
K4F660412D-TC_L |
16M x 4 bit CMOS dynamic RAM with fast page mode. 3.3V, 8K refresh cycle. |
Samsung Electronic |
57 |
MC1412D |
PERIPHERAL DRIVER ARRAYS |
Motorola |
58 |
NMA2412D |
Isolated 1W Dual Output DC-DC Converters |
C&D Technologies |
59 |
NMA2412D |
DC/DC converter, 1 watt. Output voltage +-12VDC. Output current +-40mA. Input 24VDC . |
International Power Sources |
60 |
NME2412D |
Isolated 1W Single Output DC-DC Converters |
C&D Technologies |
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