No. |
Part Name |
Description |
Manufacturer |
31 |
K4E641612C-TL60 |
4M x 16bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
32 |
K4E641612D |
CMOS DRAM |
Samsung Electronic |
33 |
K4E661612D, K4E641612D |
4M x 16bit CMOS Dynamic RAM with Extended Data Out Data Sheet |
Samsung Electronic |
34 |
K4E661612D, K4E641612D |
4M x 16bit CMOS Dynamic RAM with Extended Data Out Data Sheet |
Samsung Electronic |
35 |
K4E661612E, K4E641612E |
4M x 16bit CMOS Dynamic RAM with Extended Data Out Data Sheet |
Samsung Electronic |
36 |
K4E661612E, K4E641612E |
4M x 16bit CMOS Dynamic RAM with Extended Data Out Data Sheet |
Samsung Electronic |
37 |
K4F641612B |
4M x 16bit CMOS Dynamic RAM with Fast Page Mode |
Samsung Electronic |
38 |
K4F641612B-L |
4M x 16bit CMOS Dynamic RAM with Fast Page Mode |
Samsung Electronic |
39 |
K4F641612B-TC |
4M x 16bit CMOS Dynamic RAM with Fast Page Mode |
Samsung Electronic |
40 |
K4F641612B-TC45 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 45ns |
Samsung Electronic |
41 |
K4F641612B-TC50 |
4M x 16bit CMOS Dynamic RAM with Fast Page Mode |
Samsung Electronic |
42 |
K4F641612B-TC60 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 60ns |
Samsung Electronic |
43 |
K4F641612B-TL45 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 45ns, low power |
Samsung Electronic |
44 |
K4F641612B-TL50 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 50ns, low power |
Samsung Electronic |
45 |
K4F641612B-TL60 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 60ns, low power |
Samsung Electronic |
46 |
K4F641612C |
4M x 16bit CMOS Dynamic RAM with Fast Page Mode |
Samsung Electronic |
47 |
K4F641612C-L |
4M x 16bit CMOS Dynamic RAM with Fast Page Mode |
Samsung Electronic |
48 |
K4F641612C-TC |
4M x 16bit CMOS Dynamic RAM with Fast Page Mode |
Samsung Electronic |
49 |
K4F641612C-TC45 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 45ns |
Samsung Electronic |
50 |
K4F641612C-TC50 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 50ns |
Samsung Electronic |
51 |
K4F641612C-TC60 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 60ns |
Samsung Electronic |
52 |
K4F641612C-TL45 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 45ns, low power |
Samsung Electronic |
53 |
K4F641612C-TL50 |
4M x 16bit CMOS Dynamic RAM with Fast Page Mode |
Samsung Electronic |
54 |
K4F641612C-TL60 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 60ns, low power |
Samsung Electronic |
55 |
K4F661612D, K4F641612D |
4M x 16bit CMOS Dynamic RAM with Fast Page Mode Data Sheet |
Samsung Electronic |
56 |
K4F661612D, K4F641612D |
4M x 16bit CMOS Dynamic RAM with Fast Page Mode Data Sheet |
Samsung Electronic |
57 |
K4F661612E, K4F641612E |
4M x 16bit CMOS Dynamic RAM with Fast Page Mode Data Sheet |
Samsung Electronic |
58 |
K4F661612E, K4F641612E |
4M x 16bit CMOS Dynamic RAM with Fast Page Mode Data Sheet |
Samsung Electronic |
59 |
NE41612 |
35 V, NPN medium power UHF-VHF transistor |
NEC |
60 |
PCN10-020P-2.54DSA |
Product Compliant to DIN41612/IEC603-2 Standard |
Hirose Electric |
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