No. |
Part Name |
Description |
Manufacturer |
31 |
KM416C1204BT-45 |
5V, 1M x 16 bit CMOS DRAM with extended data out, 45ns |
Samsung Electronic |
32 |
KM416C1204BT-5 |
5V, 1M x 16 bit CMOS DRAM with extended data out, 50ns |
Samsung Electronic |
33 |
KM416C1204BT-6 |
5V, 1M x 16 bit CMOS DRAM with extended data out, 60ns |
Samsung Electronic |
34 |
KM416C1204BT-7 |
5V, 1M x 16 bit CMOS DRAM with extended data out, 70ns |
Samsung Electronic |
35 |
KM416C1204BT-L45 |
5V, 1M x 16 bit CMOS DRAM with extended data out, 45ns |
Samsung Electronic |
36 |
KM416C1204BT-L5 |
5V, 1M x 16 bit CMOS DRAM with extended data out, 50ns |
Samsung Electronic |
37 |
KM416C1204BT-L6 |
5V, 1M x 16 bit CMOS DRAM with extended data out, 60ns |
Samsung Electronic |
38 |
KM416C1204BT-L7 |
5V, 1M x 16 bit CMOS DRAM with extended data out, 70ns |
Samsung Electronic |
39 |
KM416C1204C |
1M x 16Bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
40 |
KM416C1204CJ-45 |
1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=5.0V, refresh period=16ms |
Samsung Electronic |
41 |
KM416C1204CJ-5 |
5V, 1M x 16 bit CMOS DRAM with extended data out, 50ns |
Samsung Electronic |
42 |
KM416C1204CJ-50 |
1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, refresh period=16ms |
Samsung Electronic |
43 |
KM416C1204CJ-6 |
5V, 1M x 16 bit CMOS DRAM with extended data out, 60ns |
Samsung Electronic |
44 |
KM416C1204CJ-60 |
1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, refresh period=16ms |
Samsung Electronic |
45 |
KM416C1204CJ-L45 |
5V, 1M x 16 bit CMOS DRAM with extended data out, 45ns |
Samsung Electronic |
46 |
KM416C1204CJ-L5 |
5V, 1M x 16 bit CMOS DRAM with extended data out, 50ns |
Samsung Electronic |
47 |
KM416C1204CJ-L6 |
5V, 1M x 16 bit CMOS DRAM with extended data out, 60ns |
Samsung Electronic |
48 |
KM416C1204CJL-45 |
1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=5.0V, self-refresh |
Samsung Electronic |
49 |
KM416C1204CJL-50 |
1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, self-refresh |
Samsung Electronic |
50 |
KM416C1204CJL-60 |
1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, self-refresh |
Samsung Electronic |
51 |
KM416C1204CT-45 |
5V, 1M x 16 bit CMOS DRAM with extended data out, 45ns |
Samsung Electronic |
52 |
KM416C1204CT-5 |
5V, 1M x 16 bit CMOS DRAM with extended data out, 50ns |
Samsung Electronic |
53 |
KM416C1204CT-50 |
1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, refresh period=16ms |
Samsung Electronic |
54 |
KM416C1204CT-6 |
5V, 1M x 16 bit CMOS DRAM with extended data out, 60ns |
Samsung Electronic |
55 |
KM416C1204CT-60 |
1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, refresh period=16ms |
Samsung Electronic |
56 |
KM416C1204CT-L45 |
5V, 1M x 16 bit CMOS DRAM with extended data out, 45ns |
Samsung Electronic |
57 |
KM416C1204CT-L5 |
5V, 1M x 16 bit CMOS DRAM with extended data out, 50ns |
Samsung Electronic |
58 |
KM416C1204CT-L6 |
5V, 1M x 16 bit CMOS DRAM with extended data out, 60ns |
Samsung Electronic |
59 |
KM416C1204CTL-45 |
1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=5.0V, self-refresh |
Samsung Electronic |
60 |
KM416C1204CTL-50 |
1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, self-refresh |
Samsung Electronic |
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