| No. |
Part Name |
Description |
Manufacturer |
| 31 |
IDT71V416L12BE |
3.3V 256K x 16 Static RAM Center Pwr & Gnd Pinout |
IDT |
| 32 |
IDT71V416L12BE8 |
3.3V 256K x 16 Static RAM Center Pwr & Gnd Pinout |
IDT |
| 33 |
IDT71V416L12BE8 |
3.3V 256K x 16 Static RAM Center Pwr & Gnd Pinout |
IDT |
| 34 |
IDT71V416L12BEI |
3.3V 256K x 16 Static RAM Center Pwr & Gnd Pinout |
IDT |
| 35 |
IDT71V416L12BEI |
3.3V 256K x 16 Static RAM Center Pwr & Gnd Pinout |
IDT |
| 36 |
IDT71V416L12BEI8 |
3.3V 256K x 16 Static RAM Center Pwr & Gnd Pinout |
IDT |
| 37 |
IDT71V416L12BEI8 |
3.3V 256K x 16 Static RAM Center Pwr & Gnd Pinout |
IDT |
| 38 |
IS62U6416LL-20B |
64K x 16 low voltage, ultra-low power CMOS static RAM |
Integrated Silicon Solution Inc |
| 39 |
IS62U6416LL-20BI |
64K x 16 low voltage, ultra-low power CMOS static RAM |
Integrated Silicon Solution Inc |
| 40 |
IS62U6416LL-20K |
64K x 16 low voltage, ultra-low power CMOS static RAM |
Integrated Silicon Solution Inc |
| 41 |
IS62U6416LL-20KI |
64K x 16 low voltage, ultra-low power CMOS static RAM |
Integrated Silicon Solution Inc |
| 42 |
IS62U6416LL-20T |
64K x 16 low voltage, ultra-low power CMOS static RAM |
Integrated Silicon Solution Inc |
| 43 |
IS62U6416LL-20TI |
64K x 16 low voltage, ultra-low power CMOS static RAM |
Integrated Silicon Solution Inc |
| 44 |
KM416L8031BT |
128Mb DDR SDRAM |
Samsung Electronic |
| 45 |
KM416L8031BT-F0 |
128 Mb DDR SDRAM. Version 0.61, Operating freq. 100 MHz, speed 10ns. |
Samsung Electronic |
| 46 |
KM416L8031BT-FY |
128 Mb DDR SDRAM. Version 0.61, Operating freq. 133 MHz, speed 7.5ns. |
Samsung Electronic |
| 47 |
KM416L8031BT-FZ |
128 Mb DDR SDRAM. Version 0.61, Operating freq. 133 MHz, speed 7.5ns. |
Samsung Electronic |
| 48 |
KM416L8031BT-G(F)0 |
DDR SDRAM Specification Version 0.61 |
Samsung Electronic |
| 49 |
KM416L8031BT-G(F)Y |
DDR SDRAM Specification Version 0.61 |
Samsung Electronic |
| 50 |
KM416L8031BT-G(F)Z |
DDR SDRAM Specification Version 0.61 |
Samsung Electronic |
| 51 |
KM416L8031BT-G(L)0 |
DDR SDRAM Specification Version 1.0 |
Samsung Electronic |
| 52 |
KM416L8031BT-G(L)Y |
DDR SDRAM Specification Version 1.0 |
Samsung Electronic |
| 53 |
KM416L8031BT-G(L)Z |
DDR SDRAM Specification Version 1.0 |
Samsung Electronic |
| 54 |
KM416L8031BT-G0 |
128 Mb DDR SDRAM. Version 0.61, Operating freq. 100 MHz, speed 10ns. |
Samsung Electronic |
| 55 |
KM416L8031BT-GY |
128 Mb DDR SDRAM. Version 0.61, Operating freq. 133 MHz, speed 7.5 ns. |
Samsung Electronic |
| 56 |
KM416L8031BT-GZ |
128 Mb DDR SDRAM. Version 0.61, Operating freq. 133 MHz, speed 7.5 ns. |
Samsung Electronic |
| 57 |
MC416L |
OR J-K Flip-Flop, Ceramic package TO-116 |
Motorola |
| 58 |
MMBF4416L |
Small Signal JFET |
ON Semiconductor |
| 59 |
MMBF4416LT1 |
JFET VHF/UHF Amplifier Transistor |
Motorola |
| 60 |
MMBF4416LT1 |
Small Signal JFET |
ON Semiconductor |
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