| No. |
Part Name |
Description |
Manufacturer |
| 31 |
HYB314175BJ-50 |
3.3V 256 K x 16-Bit EDO-DRAM 3.3V 256 K x 16-Bit EDO-DRAM Low power version with Self Refresh |
Siemens |
| 32 |
HYB314175BJ-55 |
3.3V 256 K x 16-Bit EDO-DRAM 3.3V 256 K x 16-Bit EDO-DRAM Low power version with Self Refresh |
Siemens |
| 33 |
HYB314175BJ-60 |
256k x 16 Bit EDO DRAM 3.3 V 60 ns |
Infineon |
| 34 |
HYB314175BJ-60 |
3.3V 256 K x 16-Bit EDO-DRAM 3.3V 256 K x 16-Bit EDO-DRAM Low power version with Self Refresh |
Siemens |
| 35 |
HYB314175BJL-50 |
3.3V 256 K x 16-Bit EDO-DRAM 3.3V 256 K x 16-Bit EDO-DRAM Low power version with Self Refresh |
Siemens |
| 36 |
HYB314175BJL-55 |
3.3V 256 K x 16-Bit EDO-DRAM 3.3V 256 K x 16-Bit EDO-DRAM Low power version with Self Refresh |
Siemens |
| 37 |
HYB314175BJL-60 |
3.3V 256 K x 16-Bit EDO-DRAM 3.3V 256 K x 16-Bit EDO-DRAM Low power version with Self Refresh |
Siemens |
| 38 |
HYB514175BJ-50 |
256k x 16 Bit EDO DRAM 5 V 50 ns |
Infineon |
| 39 |
HYB514175BJ-50 |
-256k x 16-Bit EDO-DRAM |
Siemens |
| 40 |
HYB514175BJ-50 |
256k x 16-Bit EDO-DRAM |
Siemens |
| 41 |
HYB514175BJ-50 |
-256k x 16-Bit EDO-DRAM |
Siemens |
| 42 |
HYB514175BJ-55 |
256k x 16 Bit EDO DRAM 5 V 55 ns |
Infineon |
| 43 |
HYB514175BJ-55 |
256k x 16-Bit EDO-DRAM |
Siemens |
| 44 |
HYB514175BJ-60 |
256k x 16 Bit EDO DRAM 5 V 60 ns |
Infineon |
| 45 |
HYB514175BJ-60 |
256k x 16-Bit EDO-DRAM |
Siemens |
| 46 |
ITT74175 |
HEX/QUADRUPLE D-TYPE Flip-Flops with clear |
ITT Semiconductors |
| 47 |
LA4175 |
SINGLE-CHIP AF AMPLIFIER |
SANYO |
| 48 |
MAX4175 |
SOT23, Rail-to-Rail, Fixed-Gain, Gain Amps/Open-Loop Op Amps |
MAXIM - Dallas Semiconductor |
| 49 |
MAX4175ABEUK-T |
Single, Rail-to-Rail, GainAmp op amp with precision internal gain-setting resistors. Rf/Rg inverting gain 0.25, 1+ (Rf/Dg) noninverting gain 1.25, -3dB BW 1700kHz. |
MAXIM - Dallas Semiconductor |
| 50 |
MAX4175ACEUK-T |
Single, Rail-to-Rail, GainAmp op amp with precision internal gain-setting resistors. Rf/Rg inverting gain 0.5, 1+ (Rf/Dg) noninverting gain 1.5, -3dB BW 1280kHz. |
MAXIM - Dallas Semiconductor |
| 51 |
MAX4175ADEUK |
SOT23, Rail-to-Rail, Fixed-Gain GainAmps/Open-Loop Op Amps |
MAXIM - Dallas Semiconductor |
| 52 |
MAX4175ADEUK-T |
Single, Rail-to-Rail, GainAmp op amp with precision internal gain-setting resistors. Rf/Rg inverting gain 1, 1+ (Rf/Dg) noninverting gain 2, -3dB BW 590kHz. |
MAXIM - Dallas Semiconductor |
| 53 |
MAX4175AEEUK-T |
Single, Rail-to-Rail, GainAmp op amp with precision internal gain-setting resistors. Rf/Rg inverting gain 1.25, 1+ (Rf/Dg) noninverting gain 2.25, -3dB BW 450kHz. |
MAXIM - Dallas Semiconductor |
| 54 |
MAX4175AFEUK-T |
Single, Rail-to-Rail, GainAmp op amp with precision internal gain-setting resistors. Rf/Rg inverting gain 1.5, 1+ (Rf/Dg) noninverting gain 2.5, -3dB BW 1180kHz. |
MAXIM - Dallas Semiconductor |
| 55 |
MAX4175AGEUK |
SOT23, Rail-to-Rail, Fixed-Gain GainAmps/Open-Loop Op Amps |
MAXIM - Dallas Semiconductor |
| 56 |
MAX4175AGEUK-T |
Single, Rail-to-Rail, GainAmp op amp with precision internal gain-setting resistors. Rf/Rg inverting gain 2, 1+ (Rf/Dg) noninverting gain 3, -3dB BW 970kHz. |
MAXIM - Dallas Semiconductor |
| 57 |
MAX4175AHEUK-T |
Single, Rail-to-Rail, GainAmp op amp with precision internal gain-setting resistors. Rf/Rg inverting gain 2.5, 1+ (Rf/Dg) noninverting gain 3.5, -3dB BW 820kHz. |
MAXIM - Dallas Semiconductor |
| 58 |
MAX4175AJEUK-T |
Single, Rail-to-Rail, GainAmp op amp with precision internal gain-setting resistors. Rf/Rg inverting gain 3, 1+ (Rf/Dg) noninverting gain 4, -3dB BW 690kHz. |
MAXIM - Dallas Semiconductor |
| 59 |
MAX4175AKEUK-T |
Single, Rail-to-Rail, GainAmp op amp with precision internal gain-setting resistors. Rf/Rg inverting gain 4, 1+ (Rf/Dg) noninverting gain 5, -3dB BW 970kHz. |
MAXIM - Dallas Semiconductor |
| 60 |
MAX4175ALEUK-T |
Single, Rail-to-Rail, GainAmp op amp with precision internal gain-setting resistors. Rf/Rg inverting gain 5, 1+ (Rf/Dg) noninverting gain 6, -3dB BW 790kHz. |
MAXIM - Dallas Semiconductor |
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