No. |
Part Name |
Description |
Manufacturer |
31 |
1N5431 |
Signal Diode |
Motorola |
32 |
20D431K |
VARISTOR |
Ceramate |
33 |
20D431K |
VARISTOR |
Ceramate |
34 |
2722 162 03431 |
Circulators/isolators 3800 to 4200 MHz |
Philips |
35 |
2N1431 |
Germanium NPN Transistor |
Motorola |
36 |
2N2431 |
Germanium PNP Transistor |
Motorola |
37 |
2N3431 |
Silicon NPN Transistor |
Motorola |
38 |
2N4310 |
Silicon NPN Transistor |
Motorola |
39 |
2N4311 |
Silicon NPN Transistor |
Motorola |
40 |
2N4312 |
Silicon NPN Transistor |
Motorola |
41 |
2N4313 |
Silicon PNP Transistor |
Motorola |
42 |
2N4314 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
43 |
2N4314 |
Medium power silicon N-P-N planar transistor. |
General Electric Solid State |
44 |
2N4314 |
Silicon PNP Transistor |
Motorola |
45 |
2N4314 |
Medium Power PNP Transistor |
National Semiconductor |
46 |
2N4316 |
THYRISTOR |
Motorola |
47 |
2N4317 |
THYRISTOR |
Motorola |
48 |
2N4318 |
THYRISTOR |
Motorola |
49 |
2N4319 |
THYRISTOR |
Motorola |
50 |
2N4431 |
Silicon NPN Transistor |
Motorola |
51 |
2N4431 |
Microwave Power NPN Transistor for CLASS C applications |
SGS Thomson Microelectronics |
52 |
2N4431 |
RF transistor |
Texas Instruments |
53 |
2N5431 |
MU4893 |
Central Semiconductor |
54 |
2N5431 |
Silicon annular unijunction transistor characterized primarily for low interbase-voltage operation in sensing, pulse triggering, and timing circuits |
Motorola |
55 |
2N5431 |
UNIJUNCTION TRANSISTOR |
Motorola |
56 |
2N5431 |
Silicon annular PN unijinction transistor. |
Motorola |
57 |
2N5431 |
Trans GP BJT NPN 100V 7A 3-Pin(2+Tab) TO-66 Sleeve |
New Jersey Semiconductor |
58 |
2N6431 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
59 |
2N6431 |
Silicon NPN Transistor |
Motorola |
60 |
2N6431 |
Trans GP BJT NPN 300V 0.1A 3-Pin TO-18 Box |
New Jersey Semiconductor |
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