| No. |
Part Name |
Description |
Manufacturer |
| 31 |
KM44C4104ASL-5 |
50ns; V(cc/in/out): -1 to +7V; 1W; 4M x 4 bit CMOS dynamic RAM with extended data out |
Samsung Electronic |
| 32 |
KM44C4104ASL-6 |
60ns; V(cc/in/out): -1 to +7V; 1W; 4M x 4 bit CMOS dynamic RAM with extended data out |
Samsung Electronic |
| 33 |
KM44C4104ASL-7 |
70ns; V(cc/in/out): -1 to +7V; 1W; 4M x 4 bit CMOS dynamic RAM with extended data out |
Samsung Electronic |
| 34 |
KM44C4104ASL-8 |
80ns; V(cc/in/out): -1 to +7V; 1W; 4M x 4 bit CMOS dynamic RAM with extended data out |
Samsung Electronic |
| 35 |
KM44C4105C |
4M x 4Bit CMOS Quad CAS DRAM with Extended Data Out |
Samsung Electronic |
| 36 |
KM44C4105CK-5 |
4M x 4bit CMOS quad CAS DRAM with extended data out, 50ns |
Samsung Electronic |
| 37 |
KM44C4105CK-6 |
4M x 4bit CMOS quad CAS DRAM with extended data out, 60ns |
Samsung Electronic |
| 38 |
KM44C4105CKL-5 |
4M x 4bit CMOS quad CAS DRAM with extended data out, 50ns |
Samsung Electronic |
| 39 |
KM44C4105CKL-6 |
4M x 4bit CMOS quad CAS DRAM with extended data out, 60ns |
Samsung Electronic |
| 40 |
KM44C4105CS-5 |
4M x 4bit CMOS quad CAS DRAM with extended data out, 50ns |
Samsung Electronic |
| 41 |
KM44C4105CS-6 |
4M x 4bit CMOS quad CAS DRAM with extended data out, 60ns |
Samsung Electronic |
| 42 |
KM44C4105CSL-5 |
4M x 4bit CMOS quad CAS DRAM with extended data out, 50ns |
Samsung Electronic |
| 43 |
KM44C4105CSL-6 |
4M x 4bit CMOS quad CAS DRAM with extended data out, 60ns |
Samsung Electronic |
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