| No. |
Part Name |
Description |
Manufacturer |
| 31 |
1N4994US |
Zener Voltage Regulator Diode |
Microsemi |
| 32 |
1N4995 |
Zener Voltage Regulator Diode |
Microsemi |
| 33 |
1N4995 |
Zener Diode 360V 3W |
Motorola |
| 34 |
1N4995 |
Diode Zener Single 360V 5% 5W 2-Pin Case E |
New Jersey Semiconductor |
| 35 |
1N4995US |
Zener Voltage Regulator Diode |
Microsemi |
| 36 |
1N4996 |
Zener Voltage Regulator Diode |
Microsemi |
| 37 |
1N4996 |
Zener Diode 390V 3W |
Motorola |
| 38 |
1N4996 |
Diode Zener Single 390V 5% 5W 2-Pin Case E |
New Jersey Semiconductor |
| 39 |
1N4996US |
Zener Voltage Regulator Diode |
Microsemi |
| 40 |
1N4996US |
Diode Zener Single 390V 5% 5W 2-Pin E-MELF |
New Jersey Semiconductor |
| 41 |
1N4997 |
Standard Rectifier (trr more than 500ns) |
Microsemi |
| 42 |
1N4997 |
3A Silicon high-conductance rectifier diode |
Motorola |
| 43 |
1N4997 |
Rectifier Diode 50V 3A |
Motorola |
| 44 |
1N4997 |
Diode Switching 50V 3A 2-Pin TOP HAT |
New Jersey Semiconductor |
| 45 |
1N4998 |
Standard Rectifier (trr more than 500ns) |
Microsemi |
| 46 |
1N4998 |
3A Silicon high-conductance rectifier diode |
Motorola |
| 47 |
1N4998 |
Rectifier Diode 100V 3A |
Motorola |
| 48 |
1N4998 |
Diode Switching 100V 3A 2-Pin TOP HAT |
New Jersey Semiconductor |
| 49 |
1N4999 |
Standard Rectifier (trr more than 500ns) |
Microsemi |
| 50 |
1N4999 |
3A Silicon high-conductance rectifier diode |
Motorola |
| 51 |
1N4999 |
Rectifier Diode 200V 3A |
Motorola |
| 52 |
1N4999 |
Diode Switching 200V 3A 2-Pin TOP HAT |
New Jersey Semiconductor |
| 53 |
2N1499 |
Germanium PNP Transistor |
Motorola |
| 54 |
2N1499A |
Germanium PNP Transistor |
Motorola |
| 55 |
2N1499A |
ECDC® and MADT® PNP germanium transistor High speed switches |
Sprague |
| 56 |
2N1499B |
Germanium PNP Transistor |
Motorola |
| 57 |
2N1499B |
ECDC® and MADT® PNP germanium transistor High speed switches |
Sprague |
| 58 |
2N2499 |
P-Channel FIELD-EFFECT TRANSISTOR Junction FET |
Motorola |
| 59 |
2N3499 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
| 60 |
2N3499 |
1.000W RF NPN Metal Can Transistor. 100V Vceo, 0.500A Ic, 35 hFE. |
Continental Device India Limited |
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