No. |
Part Name |
Description |
Manufacturer |
31 |
HYS64D64020GU-8-B |
184-Pin Unbuffered Dual-In-Line Memory Modules |
Infineon |
32 |
HYS64D64020HBDL |
200-Pin Small Outline Dual-In-Line Memory Modules |
Infineon |
33 |
HYS64D64020HBDL-5-C |
200-Pin Small Outline Dual-In-Line Memory Modules |
Infineon |
34 |
HYS64D64020HBDL-6-C |
DDR SDRAM Modules - 512MB (64Mx64) PC2700 2-bank, FBGA based; Available 3Q04 |
Infineon |
35 |
HYS64D64020HDL-5-B |
DDR SDRAM Modules - 512 MB (64Mx64) PC3200 2-bank |
Infineon |
36 |
HYS64D64020HDL-6-B |
DDR SDRAM Modules - 512 MB (64Mx64) PC2700 2-bank |
Infineon |
37 |
HYS64D64300GU |
184-Pin Unbuffered Dual-In-Line Memory Modules |
Infineon |
38 |
HYS64D64300GU-5-B |
184-Pin Unbuffered Dual-In-Line Memory Modules |
Infineon |
39 |
HYS64D64300GU-6-B |
184-Pin Unbuffered Dual-In-Line Memory Modules |
Infineon |
40 |
HYS64D64300HU-5-B |
184-Pin Unbuffered Dual-In-Line Memory Modules |
Infineon |
41 |
HYS64D64300HU-6-B |
184-Pin Unbuffered Dual-In-Line Memory Modules |
Infineon |
42 |
HYS64D64320GU-5-B |
DDR SDRAM Modules - 512MB (64Mx64) PC3200 2-bank |
Infineon |
43 |
HYS64D64320GU-5-C |
DDR SDRAM Modules - 512MB (64Mx64) PC3200 2-bank |
Infineon |
44 |
HYS64D64320GU-6-B |
DDR SDRAM Modules - 512MB (64Mx64) PC2700 2-bank |
Infineon |
45 |
HYS64D64320GU-6-C |
DDR SDRAM Modules - 512MB (64Mx64) PC2700 2-bank |
Infineon |
46 |
HYS64D64320HU-5-C |
DDR SDRAM Modules - 512MB (64Mx64) PC3200 2-bank |
Infineon |
47 |
HYS64D64320HU-6-C |
DDR SDRAM Modules - 512MB (64Mx64) PC2700 2-bank |
Infineon |
48 |
K4D64163HF |
1M x 16Bit x 4 Banks Double Data Rate Synchronous DRAM |
Samsung Electronic |
49 |
K4D64163HF-TC33 |
1M x 16Bit x 4 Banks Double Data Rate Synchronous DRAM |
Samsung Electronic |
50 |
K4D64163HF-TC36 |
1M x 16Bit x 4 Banks Double Data Rate Synchronous DRAM |
Samsung Electronic |
51 |
K4D64163HF-TC40 |
1M x 16Bit x 4 Banks Double Data Rate Synchronous DRAM |
Samsung Electronic |
52 |
K4D64163HF-TC50 |
1M x 16Bit x 4 Banks Double Data Rate Synchronous DRAM |
Samsung Electronic |
53 |
K4D64163HF-TC60 |
1M x 16Bit x 4 Banks Double Data Rate Synchronous DRAM |
Samsung Electronic |
54 |
M34D64 |
64 KBIT SERIAL I2C BUS EEPROM WITH HARDWARE WRITE CONTROL ON TOP QUARTER OF MEMORY |
SGS Thomson Microelectronics |
55 |
M34D64 |
64/32 Kbit Serial IC Bus EEPROM With Hardware Write Control on Top Quarter of Memory |
SGS Thomson Microelectronics |
56 |
M34D64 |
64 KBIT SERIAL I²C BUS EEPROM WITH HARDWARE WRITE CONTROL ON TOP QUARTER OF MEMORY |
ST Microelectronics |
57 |
M34D64-R |
64 KBIT SERIAL I²C BUS EEPROM WITH HARDWARE WRITE CONTROL ON TOP QUARTER OF MEMORY |
ST Microelectronics |
58 |
M34D64-RDW6T |
64 KBIT SERIAL I²C BUS EEPROM WITH HARDWARE WRITE CONTROL ON TOP QUARTER OF MEMORY |
ST Microelectronics |
59 |
M34D64-RMN6 |
64 KBIT SERIAL I²C BUS EEPROM WITH HARDWARE WRITE CONTROL ON TOP QUARTER OF MEMORY |
ST Microelectronics |
60 |
M34D64-RMN6T |
64 KBIT SERIAL I²C BUS EEPROM WITH HARDWARE WRITE CONTROL ON TOP QUARTER OF MEMORY |
ST Microelectronics |
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