| No. |
Part Name |
Description |
Manufacturer |
| 31 |
IXFT14N100 |
Discrete MOSFETs: HiPerFET Power MOSFETS |
IXYS |
| 32 |
IXFT4N100Q |
Discrete MOSFETs: HiPerFET Power MOSFETS |
IXYS |
| 33 |
IXFX14N100 |
Discrete MOSFETs: HiPerFET Power MOSFETS |
IXYS |
| 34 |
IXFX24N100 |
Discrete MOSFETs: HiPerFET Power MOSFETS |
IXYS |
| 35 |
IXFX24N100F |
HiPerRF Power MOSFETs |
IXYS Corporation |
| 36 |
IXGA4N100 |
1000V IGBT |
IXYS |
| 37 |
IXGP4N100 |
1000V IGBT |
IXYS |
| 38 |
IXTH14N100 |
Discrete MOSFETs: Standard N-channel Types |
IXYS |
| 39 |
IXTH14N100 |
MegaMOSTMFET |
IXYS Corporation |
| 40 |
IXTX24N100 |
Discrete MOSFETs: Standard N-channel Types |
IXYS |
| 41 |
MTP4N10 |
N-Channel Power MOSFETs, 5.5 A, 60-100V |
Fairchild Semiconductor |
| 42 |
MTP4N10 |
Trans MOSFET N-CH 500V 4A 3-Pin(3+Tab) TO-220 Rail |
New Jersey Semiconductor |
| 43 |
MTY14N100 |
TMOS POWER FET 14 AMPERES 1000 VOLTS RDS(on) = 0.80 OHM |
Motorola |
| 44 |
MTY14N100E |
TMOS POWER FET 14 AMPERES 1000 VOLTS RDS(on) = 0.80 OHM |
Motorola |
| 45 |
MTY14N100E |
N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 46 |
MTY14N100E-D |
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement Mode Silicon Gate |
ON Semiconductor |
| 47 |
PRN11024N1000J |
Isolated Resistor Termination Network |
California Micro Devices Corp |
| 48 |
PRN11024N1000JR |
Isolated Resistor Termination Network |
California Micro Devices Corp |
| 49 |
PRN11024N1000JT |
Isolated Resistor Termination Network |
California Micro Devices Corp |
| 50 |
PRN11024N1001J |
Isolated Resistor Termination Network |
California Micro Devices Corp |
| 51 |
PRN11024N1001JR |
Isolated Resistor Termination Network |
California Micro Devices Corp |
| 52 |
PRN11024N1001JT |
Isolated Resistor Termination Network |
California Micro Devices Corp |
| 53 |
PRN11024N1002J |
Isolated Resistor Termination Network |
California Micro Devices Corp |
| 54 |
PRN11024N1002JR |
Isolated Resistor Termination Network |
California Micro Devices Corp |
| 55 |
PRN11024N1002JT |
Isolated Resistor Termination Network |
California Micro Devices Corp |
| 56 |
PRN11024N10R0J |
Isolated Resistor Termination Network |
California Micro Devices Corp |
| 57 |
PRN11024N10R0JR |
Isolated Resistor Termination Network |
California Micro Devices Corp |
| 58 |
PRN11024N10R0JT |
Isolated Resistor Termination Network |
California Micro Devices Corp |
| 59 |
RF1S4N100SM |
4.3A, 1000V, 3.500 Ohm, High Voltage, N-Channel Power MOSFETs |
Fairchild Semiconductor |
| 60 |
RF1S4N100SM |
4.3A/ 1000V/ 3.500 Ohm/ High Voltage/ N-Channel Power MOSFETs |
Intersil |
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