| No. |
Part Name |
Description |
Manufacturer |
| 31 |
MTP4N80E-D |
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 32 |
MTW4N80 |
TMOS E-FET POWER FIELD EFFECT TRANSISITOR N-CHANNEL ENHANCEMENT-MODE SILICON GATE |
Motorola |
| 33 |
MTW4N80E |
TMOS E-FET POWER FIELD EFFECT TRANSISITOR N-CHANNEL ENHANCEMENT-MODE SILICON GATE |
Motorola |
| 34 |
SPA04N80C3 |
for lowest Conduction Losses & fastest SwitchingPlease note: Infineon has changed the CoolMOS 800V C2 marking to C3. 800V C2 ... |
Infineon |
| 35 |
SPD04N80C3 |
for lowest Conduction Losses & fastest SwitchingPlease note: Infineon has changed the CoolMOS 800V C2 marking to C3. 800V C2 ... |
Infineon |
| 36 |
SPP04N80C3 |
for lowest Conduction Losses & fastest SwitchingPlease note: Infineon has changed the CoolMOS 800V C2 marking to C3. 800V C2 ... |
Infineon |
| 37 |
STD4N80K5 |
N-channel 800 V, 2.1 Ohm typ., 3 A Zener-protected SuperMESH(TM) 5 Power MOSFET in DPAK package |
ST Microelectronics |
| 38 |
STF4N80K5 |
N-channel 800 V, 2.1 Ohm typ., 3 A Zener-protected SuperMESH(TM) 5 Power MOSFET in TO-220FP package |
ST Microelectronics |
| 39 |
STL4N80K5 |
N-channel 800 V, 2.1 Ohm typ., 2.5 A Zener-protected SuperMESH(TM) 5 Power MOSFET in a PowerFLAT(TM) 5x6 VHV package |
ST Microelectronics |
| 40 |
STP4N80K5 |
N-channel 800 V, 2.1 Ohm typ., 3 A Zener-protected SuperMESH(TM) 5 Power MOSFET in TO-220 package |
ST Microelectronics |
| 41 |
STU4N80K5 |
N-channel 800 V, 2.1 Ohm typ., 3 A Zener-protected SuperMESH(TM) 5 Power MOSFET in IPAK package |
ST Microelectronics |
| 42 |
TSM4N80CI |
Discrete Devices-MOSFET-Single N-Channel |
Taiwan Semiconductor |
| 43 |
TSM4N80CZ |
Discrete Devices-MOSFET-Single N-Channel |
Taiwan Semiconductor |
| 44 |
ZRA124N801 |
PRECISION 1.25 VOLT MICROPOWER VOLTAGE REFERENCE |
Zetex Semiconductors |
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