| No. |
Part Name |
Description |
Manufacturer |
| 31 |
CY37384VP160-154NXC |
5V, 3.3V, ISRTM High-Performance CPLDs |
Cypress |
| 32 |
CY37384VP208-154NXC |
5V, 3.3V, ISRTM High-Performance CPLDs |
Cypress |
| 33 |
CY37384VP256-154NXC |
5V, 3.3V, ISRTM High-Performance CPLDs |
Cypress |
| 34 |
CY37384VP352-154NXC |
5V, 3.3V, ISRTM High-Performance CPLDs |
Cypress |
| 35 |
CY37384VP400-154NXC |
5V, 3.3V, ISRTM High-Performance CPLDs |
Cypress |
| 36 |
CY37384VP44-154NXC |
5V, 3.3V, ISRTM High-Performance CPLDs |
Cypress |
| 37 |
CY37384VP48-154NXC |
5V, 3.3V, ISRTM High-Performance CPLDs |
Cypress |
| 38 |
CY37384VP84-154NXC |
5V, 3.3V, ISRTM High-Performance CPLDs |
Cypress |
| 39 |
CY3764VP100-154NXC |
5V, 3.3V, ISRTM High-Performance CPLDs |
Cypress |
| 40 |
CY3764VP160-154NXC |
5V, 3.3V, ISRTM High-Performance CPLDs |
Cypress |
| 41 |
CY3764VP208-154NXC |
5V, 3.3V, ISRTM High-Performance CPLDs |
Cypress |
| 42 |
CY3764VP256-154NXC |
5V, 3.3V, ISRTM High-Performance CPLDs |
Cypress |
| 43 |
CY3764VP352-154NXC |
5V, 3.3V, ISRTM High-Performance CPLDs |
Cypress |
| 44 |
CY3764VP400-154NXC |
5V, 3.3V, ISRTM High-Performance CPLDs |
Cypress |
| 45 |
CY3764VP44-154NXC |
5V, 3.3V, ISRTM High-Performance CPLDs |
Cypress |
| 46 |
CY3764VP48-154NXC |
5V, 3.3V, ISRTM High-Performance CPLDs |
Cypress |
| 47 |
CY3764VP84-154NXC |
5V, 3.3V, ISRTM High-Performance CPLDs |
Cypress |
| 48 |
PBSS304NX |
60 V, 4.7 A NPN low VCEsat (BISS) transistor |
Nexperia |
| 49 |
PBSS304NX |
60 V, 4.7 A NPN low VCEsat (BISS) transistor |
NXP Semiconductors |
| 50 |
PW82454NX |
PCI expander bridge (PXB) |
Intel |
| 51 |
SB82434NX |
PCI, cache and memory controller (PCMC) |
Intel |
| 52 |
W4NXD8C-0000 |
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 53 |
W4NXD8C-L000 |
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 54 |
W4NXD8C-S000 |
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 55 |
W4NXD8D-0000 |
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 56 |
W4NXD8D-S000 |
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 57 |
W4NXD8G-0000 |
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| | | |
