| No. |
Part Name |
Description |
Manufacturer |
| 31 |
1N5253D |
25 V, 5.0 mA, zener diode |
Leshan Radio Company |
| 32 |
1N5523A |
0.4 W, low voltage avalanche diode. Nominal zener voltage 5.1 V. Test current 5.0 mAdc. +-10% tolerance. |
Jinan Gude Electronic Device |
| 33 |
1N5523B |
0.4 W, low voltage avalanche diode. Nominal zener voltage 5.1 V. Test current 5.0 mAdc. +-5% tolerance. |
Jinan Gude Electronic Device |
| 34 |
1N5523C |
0.4 W, low voltage avalanche diode. Nominal zener voltage 5.1 V. Test current 5.0 mAdc. +-2% tolerance. |
Jinan Gude Electronic Device |
| 35 |
1N5946 |
1.5 W, silicon zener diode. Zener voltage 75 V. Test current 5.0 mA. +-20% tolerance. |
Jinan Gude Electronic Device |
| 36 |
1N5946A |
1.5 W, silicon zener diode. Zener voltage 75 V. Test current 5.0 mA. +-10% tolerance. |
Jinan Gude Electronic Device |
| 37 |
1N5946C |
1.5 W, silicon zener diode. Zener voltage 75 V. Test current 5.0 mA. +-2% tolerance. |
Jinan Gude Electronic Device |
| 38 |
1N5946D |
1.5 W, silicon zener diode. Zener voltage 75 V. Test current 5.0 mA. +-1% tolerance. |
Jinan Gude Electronic Device |
| 39 |
333GD |
5.0 MM ROUND TYPE LED LAMPS |
Everlight Electronics |
| 40 |
333HD |
5.0 MM ROUND TYPE LED LAMPS |
Everlight Electronics |
| 41 |
3EZ150D |
3 W, silicon zener diode. Nominal voltage 150 V, current 5.0 mA, +-20% tolerance. |
Jinan Gude Electronic Device |
| 42 |
3EZ150D1 |
3 W, silicon zener diode. Nominal voltage 150 V, current 5.0 mA, +-1% tolerance. |
Jinan Gude Electronic Device |
| 43 |
3EZ150D10 |
3 W, silicon zener diode. Nominal voltage 150 V, current 5.0 mA, +-10% tolerance. |
Jinan Gude Electronic Device |
| 44 |
3EZ150D2 |
3 W, silicon zener diode. Nominal voltage 150 V, current 5.0 mA, +-2% tolerance. |
Jinan Gude Electronic Device |
| 45 |
3EZ150D3 |
3 W, silicon zener diode. Nominal voltage 150 V, current 5.0 mA, +-3% tolerance. |
Jinan Gude Electronic Device |
| 46 |
3EZ150D4 |
3 W, silicon zener diode. Nominal voltage 150 V, current 5.0 mA, +-4% tolerance. |
Jinan Gude Electronic Device |
| 47 |
523YD |
2.0*5.0 MM RECTANGLE TYPE LED LAMPS |
Everlight Electronics |
| 48 |
5KP100 |
Transient voltage suppressor. Peak pulse power 5000 W. Breakdown voltage Vbrmin = 111 V, Vbrmax = 136 V. Test current It = 5.0 mA. |
Shanghai Sunrise Electronics |
| 49 |
5KP100A |
Transient voltage suppressor. Peak pulse power 5000 W. Breakdown voltage Vbrmin = 111 V, Vbrmax = 123 V. Test current It = 5.0 mA. |
Shanghai Sunrise Electronics |
| 50 |
5KP100C |
Transient voltage suppressor. Peak pulse power 5000 W. Breakdown voltage Vbrmin = 111 V, Vbrmax = 136 V. Test current It = 5.0 mA. |
Shanghai Sunrise Electronics |
| 51 |
5KP100CA |
Transient voltage suppressor. Peak pulse power 5000 W. Breakdown voltage Vbrmin = 111 V, Vbrmax = 123 V. Test current It = 5.0 mA. |
Shanghai Sunrise Electronics |
| 52 |
5KP110 |
Transient voltage suppressor. Peak pulse power 5000 W. Breakdown voltage Vbrmin = 122 V, Vbrmax = 149 V. Test current It = 5.0 mA. |
Shanghai Sunrise Electronics |
| 53 |
5KP110A |
Transient voltage suppressor. Peak pulse power 5000 W. Breakdown voltage Vbrmin = 122 V, Vbrmax = 135 V. Test current It = 5.0 mA. |
Shanghai Sunrise Electronics |
| 54 |
5KP110C |
Transient voltage suppressor. Peak pulse power 5000 W. Breakdown voltage Vbrmin = 122 V, Vbrmax = 149 V. Test current It = 5.0 mA. |
Shanghai Sunrise Electronics |
| 55 |
5KP110CA |
Transient voltage suppressor. Peak pulse power 5000 W. Breakdown voltage Vbrmin = 122 V, Vbrmax = 135 V. Test current It = 5.0 mA. |
Shanghai Sunrise Electronics |
| 56 |
BUK7M15-40H |
N-channel 40 V, 15.0 mΩ standard level MOSFET in LFPAK33 |
Nexperia |
| 57 |
BUK9M15-40H |
N-channel 40 V, 15.0 mΩ logic level MOSFET in LFPAK33 |
Nexperia |
| 58 |
G692H263TC |
2.63 V, 5.0 mA, voltage monitor with manual reset input |
Global Mixed-mode Technology |
| 59 |
G692H293TC |
2.93 V, 5.0 mA, voltage monitor with manual reset input |
Global Mixed-mode Technology |
| 60 |
G692H308TC |
3.08 V, 5.0 mA, voltage monitor with manual reset input |
Global Mixed-mode Technology |
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