No. |
Part Name |
Description |
Manufacturer |
31 |
NX6508GH59 |
InGaAsP MQW-DFB laser diode for 2.5 Gb/s, CWDM applications. Wavelength 1590 nm (typ). |
NEC |
32 |
NX6508GH61 |
InGaAsP MQW-DFB laser diode for 2.5 Gb/s, CWDM applications. Wavelength 1610 nm (typ). |
NEC |
33 |
NX6508GK47 |
InGaAsP MQW-DFB laser diode for 2.5 Gb/s, CWDM applications. Wavelength 1470 nm (typ). |
NEC |
34 |
NX6508GK49 |
InGaAsP MQW-DFB laser diode for 2.5 Gb/s, CWDM applications. Wavelength 1490 nm (typ). |
NEC |
35 |
NX6508GK51 |
InGaAsP MQW-DFB laser diode for 2.5 Gb/s, CWDM applications. Wavelength 1510 nm (typ). |
NEC |
36 |
NX6508GK53 |
InGaAsP MQW-DFB laser diode for 2.5 Gb/s, CWDM applications. Wavelength 1530 nm (typ). |
NEC |
37 |
NX6508GK55 |
InGaAsP MQW-DFB laser diode for 2.5 Gb/s, CWDM applications. Wavelength 1550 nm (typ). |
NEC |
38 |
NX6508GK57 |
InGaAsP MQW-DFB laser diode for 2.5 Gb/s, CWDM applications. Wavelength 1570 nm (typ). |
NEC |
39 |
NX6508GK59 |
InGaAsP MQW-DFB laser diode for 2.5 Gb/s, CWDM applications. Wavelength 1590 nm (typ). |
NEC |
40 |
NX6508GK61 |
InGaAsP MQW-DFB laser diode for 2.5 Gb/s, CWDM applications. Wavelength 1610 nm (typ). |
NEC |
41 |
PT6508G |
1.7VOUT 8AMP 3.3V/5V-INPUT ADJUSTABLE ISR WITH SHORT-CIRCUIT PROTECTION |
Texas Instruments |
42 |
SFAD508G |
Rectifier: Superfast |
Taiwan Semiconductor |
43 |
SFAF508G |
Rectifier: Superfast |
Taiwan Semiconductor |
44 |
SFF508G |
Rectifier: Superfast |
Taiwan Semiconductor |
45 |
UPB1508GV |
3 GHz INPUT DIVIDE BY 2 PRESCALER IC FOR DBS TUNERS |
NEC |
46 |
UPB1508GV-E1 |
3 GHz INPUT DIVIDE BY 2 PRESCALER IC FOR DBS TUNERS |
NEC |
47 |
UPD7508GC-00 |
4 BIT SINGLE CHIP CMOS MICROCOMPUTERS |
NEC |
| | | |