| No. |
Part Name |
Description |
Manufacturer |
| 31 |
IS41LV16100-50TE |
3.3V 1M x 16(16-MBIT) dynamic RAM with edo page mode |
Integrated Silicon Solution Inc |
| 32 |
IS41LV16105-50TE |
3.3V 1M x 16(16-MBIT) dynamic RAM with fast page mode |
Integrated Silicon Solution Inc |
| 33 |
IS41LV16400-50TE |
3.3V 4M x 16(64-MBIT) dynamic RAM with edo page mode |
Integrated Silicon Solution Inc |
| 34 |
RB058L150TE25 |
Schottky Barrier Diode |
ROHM |
| 35 |
RB068L150TE25 |
Schottky Barrier Diode |
ROHM |
| 36 |
RB168L150TE25 |
Schottky Barrier Diode |
ROHM |
| 37 |
UPA1950TE |
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
NEC |
| 38 |
UPA1950TE-T1 |
Pch enhancement-type MOS FET |
NEC |
| 39 |
UPA1950TE-T2 |
Pch enhancement-type MOS FET |
NEC |
| | | |
