| No. |
Part Name |
Description |
Manufacturer |
| 31 |
1214GN-750V |
GaN Transistors |
Microsemi |
| 32 |
129NQ150 |
150V 120A Schottky Discrete Diode in a D-67 HALF-Pak package |
International Rectifier |
| 33 |
129NQ150R |
150V 120A Schottky DISCR. (R) Diode in a D-67 HALF-Pak package |
International Rectifier |
| 34 |
12CC12 |
Silicon diffused junction rectifier 150V 12A |
TOSHIBA |
| 35 |
12CD12 |
Silicon diffused junction rectifier 150V 12A |
TOSHIBA |
| 36 |
12CGQ150 |
35A 150V Hi-Rel Schottky Common Cathode Diode in a TO-254AA package |
International Rectifier |
| 37 |
12CLQ150 |
35A 150V Hi-Rel Schottky Common Cathode Diode in a SMD-1 package |
International Rectifier |
| 38 |
15046-ECG |
Surge arrester (gas filled). Nominal breakdown voltage 350VDC |
NTE Electronics |
| 39 |
150K5A |
50V 150A Std. Recovery Diode in a DO-205AA (DO-8)package |
International Rectifier |
| 40 |
150K5A |
Diode Switching 50V 150A 2-Pin DO-8 |
New Jersey Semiconductor |
| 41 |
150KR5A |
Diode Switching 50V 150A 2-Pin DO-8 |
New Jersey Semiconductor |
| 42 |
150KS5 |
50V 150A Std. Recovery Diode in a B-42package |
International Rectifier |
| 43 |
150L5A |
50V 150A Std. Recovery Diode in a DO-205AC (DO-30)package |
International Rectifier |
| 44 |
15CC11 |
Silicon diffused junction rectifier 150V 15A |
TOSHIBA |
| 45 |
15CD11 |
Silicon diffused junction rectifier 150V 15A |
TOSHIBA |
| 46 |
15KP150 |
Diode TVS Single Uni-Dir 150V 15KW 2-Pin Case 5A |
New Jersey Semiconductor |
| 47 |
15KP150A |
150V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 48 |
15KP150A |
Diode TVS Single Uni-Dir 150V 15KW 2-Pin Case 5A |
New Jersey Semiconductor |
| 49 |
15KP150C |
Diode TVS Single Bi-Dir 150V 15KW 2-Pin Case 5A |
New Jersey Semiconductor |
| 50 |
15KP150CA |
Diode TVS Single Bi-Dir 150V 15KW 2-Pin Case 5A |
New Jersey Semiconductor |
| 51 |
15KPA150 |
Diode TVS Single Uni-Dir 150V 15KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
| 52 |
15KPA150A |
Diode TVS Single Uni-Dir 150V 15KW 2-Pin Case P600 Tape and Ammo |
New Jersey Semiconductor |
| 53 |
15KPA150C |
Diode TVS Single Bi-Dir 150V 15KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
| 54 |
15KPA150CA |
Diode TVS Single Bi-Dir 150V 15KW 2-Pin Case P600 Tape and Ammo |
New Jersey Semiconductor |
| 55 |
15KPA15A |
Diode TVS Single Bi-Dir 150V 15KW 2-Pin Case P600 Tape and Ammo |
New Jersey Semiconductor |
| 56 |
15KPA15C |
Diode TVS Single Bi-Dir 150V 15KW 2-Pin Case P600 Tape and Ammo |
New Jersey Semiconductor |
| 57 |
15KPA15CA |
Diode TVS Single Bi-Dir 150V 15KW 2-Pin Case P600 Tape and Ammo |
New Jersey Semiconductor |
| 58 |
169-14 |
Midget flanged base lens-end lamp. 2.50V, 0.340A, 1000Lux. |
Gilway Technical Lamp |
| 59 |
16CYQ150C |
16A 150V Hi-Rel Schottky Common Cathode Diode in a TO-257AA package |
International Rectifier |
| 60 |
16YQ150C |
16A 150V Hi-Rel Schottky Discrete Diode in a TO-257AA package |
International Rectifier |
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