No. |
Part Name |
Description |
Manufacturer |
31 |
HY51VS65163HGLT-5 |
4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 50ns, low power |
Hynix Semiconductor |
32 |
HY51VS65163HGLT-6 |
4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 60ns, low power |
Hynix Semiconductor |
33 |
HY51VS65163HGT-45 |
4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 45ns |
Hynix Semiconductor |
34 |
HY51VS65163HGT-5 |
4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 50ns |
Hynix Semiconductor |
35 |
HY51VS65163HGT-6 |
4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 60ns |
Hynix Semiconductor |
36 |
K4D551638D |
256Mbit GDDR SDRAM |
Samsung Electronic |
37 |
K4D551638D-TC |
256Mbit GDDR SDRAM |
Samsung Electronic |
38 |
K4D551638D-TC2A |
256Mbit GDDR SDRAM |
Samsung Electronic |
39 |
K4D551638D-TC33 |
256Mbit GDDR SDRAM |
Samsung Electronic |
40 |
K4D551638D-TC36 |
256Mbit GDDR SDRAM |
Samsung Electronic |
41 |
K4D551638D-TC40 |
256Mbit GDDR SDRAM |
Samsung Electronic |
42 |
K4D551638D-TC45 |
256Mbit GDDR SDRAM |
Samsung Electronic |
43 |
K4D551638D-TC50 |
256Mbit GDDR SDRAM |
Samsung Electronic |
44 |
K4D551638F-TC |
256Mbit GDDR SDRAM |
Samsung Electronic |
45 |
K4D551638F-TC33 |
256Mbit GDDR SDRAM |
Samsung Electronic |
46 |
K4D551638F-TC36 |
256Mbit GDDR SDRAM |
Samsung Electronic |
47 |
K4D551638F-TC40 |
256Mbit GDDR SDRAM |
Samsung Electronic |
48 |
K4D551638F-TC50 |
256Mbit GDDR SDRAM |
Samsung Electronic |
49 |
K4D551638F-TC60 |
256Mbit GDDR SDRAM |
Samsung Electronic |
50 |
MC145163 |
BCD / PLL |
Motorola |
51 |
MN151634 |
Microcomputers Application-Specific Standard-Product ICs |
Panasonic |
52 |
MN151638 |
Microcomputers Application-Specific Standard-Product ICs |
Panasonic |
53 |
NJL5163K |
Photo Reflector |
New Japan Radio |
54 |
NJL5163K-F1 |
Photo reflector |
New Japan Radio |
55 |
NJL5163K-F10 |
Photo reflector |
New Japan Radio |
56 |
NJL5163K-F2 |
Photo reflector |
New Japan Radio |
57 |
NJL5163K-F3 |
Photo reflector |
New Japan Radio |
58 |
NTE5163A |
Zener diode, 5 watt, +-5% tolerance. Nominal zener voltage Vz = 170V. Test current Izt = 8mA. |
NTE Electronics |
59 |
PE-5163X |
2 Watt Pulse Electrostatically Shielded, 500 mW Pulse, RF Pulse and Control Transformers |
Pulse Engineering |
60 |
SN75163B |
Octal General-Purpose Interface Bus Transceiver 20-PDIP 0 to 70 |
Texas Instruments |
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