| No. |
Part Name |
Description |
Manufacturer |
| 31 |
SN55183-SP |
Rad-Tolerant Class V, Dual Differential Line Driver |
Texas Instruments |
| 32 |
SN55183FK |
DUAL DIFFERENTIAL LINE DRIVERS |
Texas Instruments |
| 33 |
SN55183J |
Dual Differential Line Driver |
Texas Instruments |
| 34 |
SN55183W |
DUAL DIFFERENTIAL LINE DRIVERS |
Texas Instruments |
| 35 |
SN75183 |
Quadruple Differential Line Driver |
Texas Instruments |
| 36 |
SN75183D |
Quadruple Differential Line Driver |
Texas Instruments |
| 37 |
SN75183DE4 |
Quadruple Differential Line Driver 14-SOIC 0 to 70 |
Texas Instruments |
| 38 |
SN75183DR |
Quadruple Differential Line Driver |
Texas Instruments |
| 39 |
SN75183N |
Quadruple Differential Line Driver |
Texas Instruments |
| 40 |
SN75183NE4 |
Quadruple Differential Line Driver 14-PDIP 0 to 70 |
Texas Instruments |
| 41 |
SN75183NS |
QUADRUPLE DIFFERENTIAL LINE DRIVER |
Texas Instruments |
| 42 |
SN75183NSR |
Quadruple Differential Line Driver |
Texas Instruments |
| 43 |
SNJ55183FK |
Dual Differential Line Driver |
Texas Instruments |
| 44 |
SNJ55183J |
Dual Differential Line Driver |
Texas Instruments |
| 45 |
SNJ55183W |
Dual Differential Line Driver |
Texas Instruments |
| 46 |
TC51832 |
Silicon Gate CMOS / 32768 word x 8 Bit CMOS Pseudo Static RAM |
TOSHIBA |
| 47 |
TC51832F-10 |
100ns; V(in/out/dd): -1 to +7V; 600mW; 50mA; 32,768 word x 8-bit CMOS pseudo static RAM |
TOSHIBA |
| 48 |
TC51832F-12 |
120ns; V(in/out/dd): -1 to +7V; 600mW; 50mA; 32,768 word x 8-bit CMOS pseudo static RAM |
TOSHIBA |
| 49 |
TC51832F-85 |
85ns; V(in/out/dd): -1 to +7V; 600mW; 50mA; 32,768 word x 8-bit CMOS pseudo static RAM |
TOSHIBA |
| 50 |
TC51832FL-10 |
100ns; V(in/out/dd): -1 to +7V; 600mW; 50mA; 32,768 word x 8-bit CMOS pseudo static RAM |
TOSHIBA |
| 51 |
TC51832FL-12 |
120ns; V(in/out/dd): -1 to +7V; 600mW; 50mA; 32,768 word x 8-bit CMOS pseudo static RAM |
TOSHIBA |
| 52 |
TC51832FL-85 |
85ns; V(in/out/dd): -1 to +7V; 600mW; 50mA; 32,768 word x 8-bit CMOS pseudo static RAM |
TOSHIBA |
| 53 |
TC51832P-10 |
100ns; V(in/out/dd): -1 to +7V; 600mW; 50mA; 32,768 word x 8-bit CMOS pseudo static RAM |
TOSHIBA |
| 54 |
TC51832P-12 |
120ns; V(in/out/dd): -1 to +7V; 600mW; 50mA; 32,768 word x 8-bit CMOS pseudo static RAM |
TOSHIBA |
| 55 |
TC51832P-85 |
85ns; V(in/out/dd): -1 to +7V; 600mW; 50mA; 32,768 word x 8-bit CMOS pseudo static RAM |
TOSHIBA |
| 56 |
TC51832PL-10 |
100ns; V(in/out/dd): -1 to +7V; 600mW; 50mA; 32,768 word x 8-bit CMOS pseudo static RAM |
TOSHIBA |
| 57 |
TC51832PL-12 |
120ns; V(in/out/dd): -1 to +7V; 600mW; 50mA; 32,768 word x 8-bit CMOS pseudo static RAM |
TOSHIBA |
| 58 |
TC51832PL-85 |
85ns; V(in/out/dd): -1 to +7V; 600mW; 50mA; 32,768 word x 8-bit CMOS pseudo static RAM |
TOSHIBA |
| 59 |
TC51832SP-10 |
100ns; V(in/out/dd): -1 to +7V; 600mW; 50mA; 32,768 word x 8-bit CMOS pseudo static RAM |
TOSHIBA |
| 60 |
TC51832SP-12 |
120ns; V(in/out/dd): -1 to +7V; 600mW; 50mA; 32,768 word x 8-bit CMOS pseudo static RAM |
TOSHIBA |
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