No. |
Part Name |
Description |
Manufacturer |
31 |
HY51VS65163HGLJ-45 |
4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 45ns, low power |
Hynix Semiconductor |
32 |
HY51VS65163HGLJ-5 |
4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 50ns, low power |
Hynix Semiconductor |
33 |
HY51VS65163HGLJ-6 |
4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 60ns, low power |
Hynix Semiconductor |
34 |
HY51VS65163HGLT-45 |
4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 45ns, low power |
Hynix Semiconductor |
35 |
HY51VS65163HGLT-5 |
4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 50ns, low power |
Hynix Semiconductor |
36 |
HY51VS65163HGLT-6 |
4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 60ns, low power |
Hynix Semiconductor |
37 |
HY51VS65163HGT-45 |
4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 45ns |
Hynix Semiconductor |
38 |
HY51VS65163HGT-5 |
4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 50ns |
Hynix Semiconductor |
39 |
HY51VS65163HGT-6 |
4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 60ns |
Hynix Semiconductor |
40 |
PTVS51VS1UR |
400 W Transient Voltage Suppressor |
Nexperia |
41 |
PTVS51VS1UR |
400 W Transient Voltage Suppressor |
NXP Semiconductors |
42 |
PTVS51VS1UTR |
High-temperature 400 W Transient Voltage Suppressor |
Nexperia |
43 |
PTVS51VS1UTR |
High-temperature 400 W Transient Voltage Suppressor |
NXP Semiconductors |
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