| No. |
Part Name |
Description |
Manufacturer |
| 31 |
STLC5465 |
MULTI - HDLC WITH N X 64 SWITCHING MATRIX ASSOCIATED |
SGS Thomson Microelectronics |
| 32 |
STLC5465 |
MULTI - HDLC WITH N X 64 SWITCHING MATRIX ASSOCIATED |
ST Microelectronics |
| 33 |
STLC5465B |
MULTI-HDLCWITH n x 64 SWITCHING MATRIX ASSOCIATED |
SGS Thomson Microelectronics |
| 34 |
STLC5465B |
MULTI - HDLC WITH N X 64 SWITCHING MATRIX ASSOCIATED |
ST Microelectronics |
| 35 |
TC55465AJ-15 |
15ns; 120mA; V(cc): -0.1 to +7V; V(in/out); -2.0 to +7.0V; 1W; silicon gate CMOS 65.536 words x 4 Bits CMOS static RAM |
TOSHIBA |
| 36 |
TC55465AJ-20 |
20ns; 100mA; V(cc): -0.1 to +7V; V(in/out); -2.0 to +7.0V; 1W; silicon gate CMOS 65.536 words x 4 Bits CMOS static RAM |
TOSHIBA |
| 37 |
TC55465AJ-25 |
25ns; 100mA; V(cc): -0.1 to +7V; V(in/out); -2.0 to +7.0V; 1W; silicon gate CMOS 65.536 words x 4 Bits CMOS static RAM |
TOSHIBA |
| 38 |
TC55465AJ-35 |
35ns; 100mA; V(cc): -0.1 to +7V; V(in/out); -2.0 to +7.0V; 1W; silicon gate CMOS 65.536 words x 4 Bits CMOS static RAM |
TOSHIBA |
| 39 |
TC55465AP-20 |
20ns; 120mA; V(cc): -0.1 to +7V; V(in/out); -2.0 to +7.0V; 1W; silicon gate CMOS 65.536 words x 4 Bits CMOS static RAM |
TOSHIBA |
| 40 |
TC55465AP-25 |
25ns; 120mA; V(cc): -0.1 to +7V; V(in/out); -2.0 to +7.0V; 1W; silicon gate CMOS 65.536 words x 4 Bits CMOS static RAM |
TOSHIBA |
| 41 |
TC55465AP-35 |
35ns; 120mA; V(cc): -0.1 to +7V; V(in/out); -2.0 to +7.0V; 1W; silicon gate CMOS 65.536 words x 4 Bits CMOS static RAM |
TOSHIBA |
| | | |
