| No. |
Part Name |
Description |
Manufacturer |
| 31 |
S54H108 |
Dual J-K EDGE-TRIGGERED FLIP-FLOP |
Signetics |
| 32 |
S54H108A |
Dual J-K EDGE-TRIGGERED FLIP-FLOP |
Signetics |
| 33 |
S54H108F |
Dual J-K EDGE-TRIGGERED FLIP-FLOP |
Signetics |
| 34 |
S54H108W |
Dual J-K EDGE-TRIGGERED FLIP-FLOP |
Signetics |
| 35 |
S54H10A |
Triple 3-Input Positive NAND Gate |
Signetics |
| 36 |
S54H10F |
Triple 3-Input Positive NAND Gate |
Signetics |
| 37 |
S54H10W |
Triple 3-Input Positive NAND Gate |
Signetics |
| 38 |
S54H11 |
Triple 3-Input Positive AND Gate |
Signetics |
| 39 |
S54H11A |
Triple 3-Input Positive AND Gate |
Signetics |
| 40 |
S54H11F |
Triple 3-Input Positive AND Gate |
Signetics |
| 41 |
S54H11W |
Triple 3-Input Positive AND Gate |
Signetics |
| 42 |
T54H10 |
Triple 2-input positive NAND gate |
SGS-ATES |
| 43 |
T54H10 |
Triple 2-input positive NAND gate |
SGS-ATES |
| 44 |
T54H11 |
Triple 3-input positive AND gate |
SGS-ATES |
| 45 |
T54H11 |
Triple 3-input positive AND gate |
SGS-ATES |
| 46 |
TC54H1024F-10 |
100 ns; V(cc): -0.6 to +7V; 1.5W; 65,536 word x 16 bit one time programmable read only memory |
TOSHIBA |
| 47 |
TC54H1024F-85 |
85 ns; V(cc): -0.6 to +7V; 1.5W; 65,536 word x 16 bit one time programmable read only memory |
TOSHIBA |
| 48 |
TC54H1024P-10 |
100 ns; V(cc): -0.6 to +7V; 1.5W; 65,536 word x 16 bit one time programmable read only memory |
TOSHIBA |
| 49 |
TC54H1024P-85 |
85 ns; V(cc): -0.6 to +7V; 1.5W; 65,536 word x 16 bit one time programmable read only memory |
TOSHIBA |
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