| No. |
Part Name |
Description |
Manufacturer |
| 31 |
HC5517IM |
3 REN Ringing SLIC For ISDN Modem/TA and WLL |
Intersil |
| 32 |
LT5517 |
40MHz to 900MHz Quadrature Demodulator |
Linear Technology |
| 33 |
LT5517EUF |
40MHz to 900MHz quadrature demodulator. |
Linear Technology |
| 34 |
LT5517EUF#PBF |
40MHz to 900MHz Quadrature Demodulator |
Linear Technology |
| 35 |
LT5517EUF#TR |
40MHz to 900MHz Quadrature Demodulator |
Linear Technology |
| 36 |
LT5517EUF#TRPBF |
40MHz to 900MHz Quadrature Demodulator |
Linear Technology |
| 37 |
MSP430F5517 |
MSP430F551x, MSP430F552x Mixed Signal Microcontroller 80-LQFP -40 to 85 |
Texas Instruments |
| 38 |
MSP430F5517IPN |
MSP430F551x, MSP430F552x Mixed Signal Microcontroller 80-LQFP -40 to 85 |
Texas Instruments |
| 39 |
MSP430F5517IPNR |
MSP430F551x, MSP430F552x Mixed Signal Microcontroller 80-LQFP -40 to 85 |
Texas Instruments |
| 40 |
NE5517 |
Dual Operational Transconductance Amplifier |
ON Semiconductor |
| 41 |
NE5517 |
Dual operational transconductance amplifier |
Philips |
| 42 |
NE5517A |
Dual operational transconductance amplifier |
Philips |
| 43 |
NE5517AN |
Dual operational transconductance amplifier |
Philips |
| 44 |
NE5517D |
Dual operational transconductance amplifier |
Philips |
| 45 |
NE5517N |
Dual operational transconductance amplifier |
Philips |
| 46 |
NTE5517 |
Silicon Controlled Rectifier (SCR) |
NTE Electronics |
| 47 |
SN55173 |
Quadruple Differential Line Receiver |
Texas Instruments |
| 48 |
SN55173FK |
QUADRUPLE DIFFERENTIAL LINE RECEIVERS |
Texas Instruments |
| 49 |
SN55173J |
Quadruple Differential Line Receiver |
Texas Instruments |
| 50 |
SNJ55173FK |
Quadruple Differential Line Receiver |
Texas Instruments |
| 51 |
SNJ55173J |
Quadruple Differential Line Receiver |
Texas Instruments |
| 52 |
SZ5517 |
SURFACE MOUNT SILICON ZENER DIODES |
EIC discrete Semiconductors |
| 53 |
TC5517C |
2048 x 8 Bit CMOS Memory |
TOSHIBA |
| 54 |
TC5517CF-15 |
150ns; V(cc): -0.3 to +7.0V; V(in): -0.3 to +0.3V; 0.8W; 2,048 x word x 8-bit CMOS static RAM |
TOSHIBA |
| 55 |
TC5517CF-20 |
200ns; V(cc): -0.3 to +7.0V; V(in): -0.3 to +0.3V; 0.8W; 2,048 x word x 8-bit CMOS static RAM |
TOSHIBA |
| 56 |
TC5517CFL-15 |
150ns; V(cc): -0.3 to +7.0V; V(in): -0.3 to +0.3V; 0.8W; 2,048 x word x 8-bit CMOS static RAM |
TOSHIBA |
| 57 |
TC5517CFL-20 |
200ns; V(cc): -0.3 to +7.0V; V(in): -0.3 to +0.3V; 0.8W; 2,048 x word x 8-bit CMOS static RAM |
TOSHIBA |
| 58 |
TC5517CP-15 |
150ns; V(cc): -0.3 to +7.0V; V(in): -0.3 to +0.3V; 0.8W; 2,048 x word x 8-bit CMOS static RAM |
TOSHIBA |
| 59 |
TC5517CP-20 |
200ns; V(cc): -0.3 to +7.0V; V(in): -0.3 to +0.3V; 0.8W; 2,048 x word x 8-bit CMOS static RAM |
TOSHIBA |
| 60 |
TC5517CPL-15 |
150ns; V(cc): -0.3 to +7.0V; V(in): -0.3 to +0.3V; 0.8W; 2,048 x word x 8-bit CMOS static RAM |
TOSHIBA |
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