No. |
Part Name |
Description |
Manufacturer |
31 |
2722 162 05781 |
VHF/UHF Broadband Circulators/Isolators, frequency range 225 to 400 MHz |
Philips |
32 |
27301.5 |
MICRO fuse, very fast-acting type. Plug-in. Ampere rating 1 1/2. Nominal resistance cold 0.0578 Ohms. Voltage rating 125. |
Littelfuse |
33 |
27401.5 |
MICRO fuse, very fast-acting type. Plug-in. Ampere rating 1 1/2. Nominal resistance cold 0.0578 Ohms. Voltage rating 125. Military QPL type (FM02). |
Littelfuse |
34 |
27801.5 |
MICRO fuse, very fast-acting type. Radial lead. Ampere rating 1 1/2. Nominal resistance cold 0.0578 Ohms. Voltage rating 125. |
Littelfuse |
35 |
2N2578 |
Industrial-type, silicon controlled rectifier in a diamond package for applications requiring a high surge-current rating or low thermal resistance |
Motorola |
36 |
2N2578 |
SILICON CONTROLLED RECTIFIERS |
Motorola |
37 |
2N2578 |
Trans GP BJT NPN 20V 3-Pin TO-18 Box |
New Jersey Semiconductor |
38 |
2N3578 |
P-Channel FIELD-EFFECT TRANSISTOR Junction FET |
Motorola |
39 |
2N5578 |
Silicon NPN Single Diffused Low Frequency Power Transistor |
IPRS Baneasa |
40 |
2N5578 |
Trans GP BJT PNP 15V 0.05A 3-Pin TO-92 |
New Jersey Semiconductor |
41 |
2N578 |
Germanium PNP Transistor |
Motorola |
42 |
2N5780 |
Trans GP BJT PNP 65V 3.5A 3-Pin TO-39 Box |
New Jersey Semiconductor |
43 |
2N5781 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
44 |
2N5781 |
Silicon P-N-P epitaxial-base transistor. -80V, 10W. |
General Electric Solid State |
45 |
2N5781 |
Trans GP BJT PNP 65V 3.5A 3-Pin TO-39 Box |
New Jersey Semiconductor |
46 |
2N5781 |
Bipolar PNP Device in a Hermetically sealed TO39 Metal Package |
SemeLAB |
47 |
2N5782 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
48 |
2N5782 |
Silicon P-N-P epitaxial-base transistor. -65V, 10W. |
General Electric Solid State |
49 |
2N5782 |
Trans GP BJT PNP 50V 3.5A 3-Pin TO-5 |
New Jersey Semiconductor |
50 |
2N5783 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
51 |
2N5783 |
Silicon P-N-P epitaxial-base transistor. -45V, 10W. |
General Electric Solid State |
52 |
2N5783 |
Trans GP BJT PNP 40V 3.5A 3-Pin TO-39 Box |
New Jersey Semiconductor |
53 |
2N5784 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
54 |
2N5784 |
Silicon N-P-N epitaxial-base transistor. 80V, 10W. |
General Electric Solid State |
55 |
2N5784 |
Trans GP BJT NPN 65V 3.5A 3-Pin TO-39 Box |
New Jersey Semiconductor |
56 |
2N5784 |
SILICON EPITAXIAL NPN TRANSISTOR |
SemeLAB |
57 |
2N5784 |
Silicon NPN power transistor, TO-5 package, PNP Complement 2N5781 |
Silicon Transistor Corporation |
58 |
2N5784 |
Silicon NPN power transistor, TO-5 package, PNP Complement 2N5781 |
Silicon Transistor Corporation |
59 |
2N5785 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
60 |
2N5785 |
Silicon N-P-N epitaxial-base transistor. 65V, 10W. |
General Electric Solid State |
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