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Datasheets for 5V.

Datasheets found :: 1132
Page: | 1 | 2 | 3 | 4 | 5 | 6 |
No. Part Name Description Manufacturer
31 1N5922C 1.5 W, silicon zener diode. Zener voltage 7.5V. Test current 50 mA. +-2% tolerance. Jinan Gude Electronic Device
32 1N5922D 1.5 W, silicon zener diode. Zener voltage 7.5V. Test current 50 mA. +-1% tolerance. Jinan Gude Electronic Device
33 1N5929 1.5 W, silicon zener diode. Zener voltage 15V. Test current 25 mA. +-20% tolerance. Jinan Gude Electronic Device
34 1N5929A 1.5 W, silicon zener diode. Zener voltage 15V. Test current 25 mA. +-10% tolerance. Jinan Gude Electronic Device
35 1N5929C 1.5 W, silicon zener diode. Zener voltage 15V. Test current 25 mA. +-2% tolerance. Jinan Gude Electronic Device
36 1N5929D 1.5 W, silicon zener diode. Zener voltage 15V. Test current 25 mA. +-1% tolerance. Jinan Gude Electronic Device
37 1N958 0.5W, silicon zener diode. Zener voltage 7.5V. Test current 16.5mA. +-20% tolerance. Jinan Gude Electronic Device
38 1N958A 0.5W, silicon zener diode. Zener voltage 7.5V. Test current 16.5mA. +-10% tolerance. Jinan Gude Electronic Device
39 1N965 0.5W, silicon zener diode. Zener voltage 15V. Test current 8.5mA. +-20% tolerance. Jinan Gude Electronic Device
40 1N965A 0.5W, silicon zener diode. Zener voltage 15V. Test current 8.5mA. +-10% tolerance. Jinan Gude Electronic Device
41 1N982 0.5W, silicon zener diode. Zener voltage 75V. Test current 1.7mA. +-20% tolerance. Jinan Gude Electronic Device
42 1N982A 0.5W, silicon zener diode. Zener voltage 75V. Test current 1.7mA. +-10% tolerance. Jinan Gude Electronic Device
43 2N4124 General purpose transistor. Collector-emitter voltage: Vceo = 25V. Collector-base voltage: Vcbo = 30V. Collector dissipation: Pc(max) = 625mW. USHA India LTD
44 2N4126 Amplifier transistor. Collector-emitter voltage: Vceo = -25V. Collector-base voltage: Vcbo = -25V. Collector dissipation: Pc(max) = 625mW. USHA India LTD
45 2N4126 Amplifier transistor. Collector-emitter voltage: Vceo = -25V. Collector-base voltage: Vcbo = -25V. Collector dissipation: Pc(max) = 625mW. USHA India LTD
46 2N5088 Amplifier transistor. Collector-emitter voltage: Vceo = 30V. Collector-base voltage: Vcbo = 35V. Collector dissipation: Pc(max) = 625mW. USHA India LTD
47 2N5089 Amplifier transistor. Collector-emitter voltage: Vceo = 25V. Collector-base voltage: Vcbo = 30V. Collector dissipation: Pc(max) = 625mW. USHA India LTD
48 2N6121 Epitaxial-base, silicon N-P-N VERSAWATT transistor. 45V. General Electric Solid State
49 2N6124 Epitaxial-base, silicon P-N-P VERSAWATT transistor. -45V. General Electric Solid State
50 2N6394 12A silicon controlled rectifier. Vrsom 75V. General Electric Solid State
51 2N6395 12A silicon controlled rectifier. Vrsom 125V. General Electric Solid State
52 2N6400 16A silicon controlled rectifier. Vrsom 75V. General Electric Solid State
53 2N6401 16A silicon controlled rectifier. Vrsom 125V. General Electric Solid State
54 2N681 25A silicon controlled rectifier. Vrsom 35V. General Electric Solid State
55 2N682 25A silicon controlled rectifier. Vrsom 75V. General Electric Solid State
56 2N684 25A silicon controlled rectifier. Vrsom 225V. General Electric Solid State
57 2SA1015 Low frequency amplifier. Collector-base voltage: Vcbo = -50V. Collector-emitter voltage: Vceo = -50V. Emitter-base voltage Vebo = -5V.Collector dissipation: Pc(max) = 400mW. USHA India LTD
58 2SA539 Low frequency amplifier. Collector-base voltage: Vcbo = -60V. Collector-emitter voltage: Vceo = -45V. Emitter-base voltage Vebo = -5V. Collector dissipation: Pc(max) = 400mW. USHA India LTD
59 2SA539 Low frequency amplifier. Collector-base voltage: Vcbo = -60V. Collector-emitter voltage: Vceo = -45V. Emitter-base voltage Vebo = -5V. Collector dissipation: Pc(max) = 400mW. USHA India LTD
60 2SA542 Low frequency amplifier. Collector-base voltage: Vcbo = -30V. Collector-emitter voltage: Vceo = -25V. Emitter-base voltage Vebo = -5V. Collector dissipation: Pc(max) = 250mW. USHA India LTD


Datasheets found :: 1132
Page: | 1 | 2 | 3 | 4 | 5 | 6 |



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