| No. |
Part Name |
Description |
Manufacturer |
| 31 |
K4X56163PE-LG |
16M x16 Mobile DDR SDRAM |
Samsung Electronic |
| 32 |
NTLJS1102P |
Power MOSFET 8V 8.1A 36 mOhm Single P-Channel WDFN2x2 |
ON Semiconductor |
| 33 |
NVTFS4C05N |
30 V, 3.6 mOhm, 102 A, Single N-Channel, u8FL Power MOSFET |
ON Semiconductor |
| 34 |
OM10N100NK |
N-channel size 6 MOSFET, high energy capability |
Omnirel |
| 35 |
OM360NK |
N-channel size 6 MOSFET, high energy capability |
Omnirel |
| 36 |
OM460NK |
N-channel size 6 MOSFET, high energy capability |
Omnirel |
| 37 |
OM6025SC |
400V N-channel size 6 MOSFET |
Omnirel |
| 38 |
OM6026SC |
500V N-channel size 6 MOSFET |
Omnirel |
| 39 |
OM6028SC |
1000V N-channel size 6 MOSFET |
Omnirel |
| 40 |
OM6031SC |
500V N-channel size 6 MOSFET |
Omnirel |
| 41 |
OM6032SC |
400V N-channel size 6 MOSFET |
Omnirel |
| 42 |
SC16C850IBS |
2.5 V to 3.3 V UART, 5 Mbit/s (max.) with 128-byte FIFOs, infrared (IrDA), and 16 mode or 68 mode parallel bus interface |
NXP Semiconductors |
| 43 |
SC16C850IET |
2.5 V to 3.3 V UART, 5 Mbit/s (max.) with 128-byte FIFOs, infrared (IrDA), and 16 mode or 68 mode parallel bus interface |
NXP Semiconductors |
| 44 |
SC16C850LIBS |
1.8 V single UART, 5 Mbit/s (max.) with 128-byte FIFOs, infrared (IrDA) and 16 mode or 68 mode parallel bus interface |
NXP Semiconductors |
| 45 |
SC16C850LIET |
1.8 V single UART, 5 Mbit/s (max.) with 128-byte FIFOs, infrared (IrDA) and 16 mode or 68 mode parallel bus interface |
NXP Semiconductors |
| 46 |
SC16C852LIB |
1.8 V dual UART, 5 Mbit/s (max.) with 128-byte FIFOs, infrared (IrDA) and 16 mode or 68 mode bus interface |
NXP Semiconductors |
| 47 |
SC16C852LIBS |
1.8 V dual UART, 5 Mbit/s (max.) with 128-byte FIFOs, infrared (IrDA) and 16 mode or 68 mode bus interface |
NXP Semiconductors |
| 48 |
SC16C852LIET |
1.8 V dual UART, 5 Mbit/s (max.) with 128-byte FIFOs, infrared (IrDA) and 16 mode or 68 mode bus interface |
NXP Semiconductors |
| 49 |
STB270N4F3 |
N-channel 40 V, 1.6 mOhm typ., 160 A STripFET(TM) III PowerMOSFET in D2PAK package |
ST Microelectronics |
| 50 |
STH240N75F3-2 |
N-channel 75 V, 2.6 mOhm typ., 180 A STripFET(TM) III Power MOSFET in H2PAK-2 package |
ST Microelectronics |
| 51 |
STH240N75F3-6 |
N-channel 75 V, 2.6 mOhm typ., 180 A STripFET(TM) III Power MOSFET in H2PAK-6 package |
ST Microelectronics |
| 52 |
STH245N75F3-6 |
Automotive-grade N-channel 75 V, 2.6 mOhm typ., 180 A STripFET F3 Power MOSFET in H2PAK-6 package |
ST Microelectronics |
| 53 |
STL40N75LF3 |
N-channel 75 V, 16 mOhm typ., 10 A STripFET(TM) III Power MOSFET in PowerFLAT(TM) 5x6 package |
ST Microelectronics |
| 54 |
STL50N25N3LLH5 |
Dual N-channel 30 V, 6 mOhm typ., 14.6 A STripFET(TM) V Power MOSFET in PowerFLAT(TM) 5x6 asymmetrical double island package |
ST Microelectronics |
| 55 |
STL75N8LF6 |
N-channel 80 V, 5.6 mOhm, 18 A, PowerFLAT(TM) 5x6 STripFET(TM) VI DeepGATE(TM) Power MOSFET |
ST Microelectronics |
| 56 |
STP180NS04ZC |
N-channel 40 V clamped 3.6 mOhm typ., 120 A fully protected SAFeFET(TM) Power MOSFET in a TO-220 package |
ST Microelectronics |
| 57 |
TLE 6280GP |
Driver IC for 6 MOSFETs in Bridge configuration |
Infineon |
| 58 |
TLE6280GP |
Smart Motorbridges + Driver ICs - Bridgedriver for 6 MOSFETs |
Infineon |
| 59 |
VN5E016MH-E |
16 mOhm high side driver with analog current sense for automotive applications |
ST Microelectronics |
| 60 |
VN5E016MHTR-E |
16 mOhm high side driver with analog current sense for automotive applications |
ST Microelectronics |
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